NXP Semiconductors
BT137X-600
4Q Triac
BT137X-600 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 1 May 2015 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full or half cycle; without heatsink
compound; Fig. 6
- - 6.5 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
full or half cycle; with heatsink
compound; Fig. 6
- - 4.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 55 - K/W
003aaf915
10
- 1
10
- 2
1
10
Z
th(j-h)
(K/W)
10
- 3
t
p
(s)
10
- 5
1 1010
- 1
10
- 2
10
- 4
10
- 3
t
p
P
t
(1)
(2)
(3)
(4)
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
- 10 - pF
NXP Semiconductors
BT137X-600
4Q Triac
BT137X-600 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 1 May 2015 7 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 5 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 8 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 11 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 30 70 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- 7 30 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- 16 45 mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- 5 30 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 8
- 7 45 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 5 20 mA
V
T
on-state voltage I
T
= 10 A; T
j
= 25 °C; Fig. 10 - 1.3 1.65 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 600 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
100 250 - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 3.6 A/
ms; I
T
= 8 A
- 20 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 12 A; V
D
= 600 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
- 2 - µs
NXP Semiconductors
BT137X-600
4Q Triac
BT137X-600 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 1 May 2015 8 / 13
T
j
(°C)
- 60 14090- 10 40
003aae695
1
2
3
0
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
I
GT
I
GT
(25°C)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
- 60 14090- 10 40
003aae697
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
- 60 14090- 10 40
003aae699
1.0
0.5
1.5
2.0
0
I
H
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
V
T
(V)
0 321
003aae696
10
20
30
I
T
(A)
0
(1)
(2) (3)
V
o
= 1.264 V
R
s
= 0.038 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage

BT137X-600,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL TRIAC
Lifecycle:
New from this manufacturer.
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