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STPSC8H065B-TR

P1-P3P4-P6P7-P9P10-P12P13-P14
This is information on a product in full production.
February 2016 DocID023603 Rev 6 1/14
STPSC8H065
650 V power Schottky silicon carbide diode
Datasheet production data
Features
No reverse recovery charge in application
current range
Switching behavior independent of
temperature
High forward surge capability
Insulated package TO-220AC Ins:
– Insulated voltage: 2500 V rms
– Typical package capacitance: 7 pF
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
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Table 1. Device summary
Symbol Value
I
F(AV)
8 A
V
RRM
650 V
T
j
(max.) 175 °C
www.st.com
Characteristics STPSC8H065
2/14 DocID023603 Rev 6
1 Characteristics
To evaluate the conduction losses use the following equation: P = 1.35 x I
F(AV)
+ 0.144 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 650 V
I
F(RMS)
Forward rms current 22 A
I
F(AV)
Average forward
current
TO-220AC, DPAK, D
2
PAK, T
c
= 140 °C
(1)
, DC
8A
TO-220AC Ins, T
c
= 95 °C
(1)
, DC
I
FSM
Surge non
repetitive forward
current
t
p
= 10 ms sinusoidal, T
c
= 25 °C
t
p
= 10 ms sinusoidal, T
c
= 125 °C
t
p
= 10 µs square, T
c
= 25 °C
75
69
420
A
I
FRM
Repetitive peak
forward current
TO-220AC, DPAK, D
2
PAK, T
c
= 140 °C
(1)
, T
j
= 175 °C, = 0.1
33 A
TO-220AC Ins, T
c
= 95 °C
(1)
, T
j
= 175 °C, = 0.1
T
stg
Storage temperature range -55 to +175 °C
T
j
Operating junction temperature
(2)
-40 to +175 °C
1. Value based on R
th(j-c)
max.
2. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–
--------------------------
Table 3. Thermal resistance
Symbol Parameter Typ. value Max. value Unit
R
th(j-c)
Junction to case
TO-220AC, DPAK, D
2
PAK 1.3 1.6
°C/W
TO-220AC Ins 2.45 3.8
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-780
µA
T
j
= 150 °C - 65 335
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 8 A
- 1.56 1.75
V
T
j
= 150 °C - 1.98 2.5
1. t
p
= 10 ms, < 2%
2. t
p
= 500 µs, < 2%
DocID023603 Rev 6 3/14
STPSC8H065 Characteristics
14
Table 5. Dynamic electrical characteristics
Symbol Parameter Test conditions Typ. Unit
Q
cj
(1)
Total capacitive charge V
R
= 400 V 23.5 nC
C
j
Total capacitance
V
R
= 0 V, T
c
= 25 °C, F = 1 MHz 414
pF
V
R
= 400 V, T
c
= 25 °C, F = 1 MHz 38
1. Most accurate value for the capacitive charge:
Q = c
j
(v
R
).dv
R
cj
∫
V
OUT
0
Figure 1. Forward voltage drop versus forward
current (typical values, low level)
Figure 2. Forward voltage drop versus forward
current (typical values, high level)
0
2
4
6
8
10
12
14
16
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
a
=150 °C
T
a
=175 °C
T
a
=25 °C
Pulse test : t
p
=500µs
T
a
=100 °C
A)I
F
(
V
F
(V)
0
10
20
30
40
50
60
70
80
012345678
T
a
=150 °C
T
a
=175 °C
T
a
=25 °C
Pulse test : t
p
=500µs
T
a
=100 °C
A)I
F
(
V
F
(V)
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 4. Peak forward current versus case
temperature (TO-220AC, DPAK, D²PAK)
I
R
(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0 50 100 150 200 250 300 350 400 450 500 550 600 650
T
j
=25 °C
T
j
=150 °C
T
j
=175 °C
V
R
(V)
I
M
(A)
0
10
20
30
40
50
60
70
80
0 25 50 75 100 125 150 175
d = 0.1
d = 0.3
d = 0.5
d = 1
d = 0.7
T
C
(°C)
T
d
=tp/T
tp
I
M
P1-P3P4-P6P7-P9P10-P12P13-P14

STPSC8H065B-TR

Mfr. #:
Buy STPSC8H065B-TR
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 650 V 8A Schottky silicon carbide DPAK
Lifecycle:
New from this manufacturer.
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