SSM6J414TU
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= -10 V, V
GS
= -4.5 V,
I
D
= -6.0 A
Min
Typ.
23.1
3.8
4.1
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage (Note 1)
Symbol
V
DSF
Test Condition
I
D
= 6.0 A, V
GS
= 0 V
Min
Typ.
0.74
Max
1.2
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
2014-04-04
Rev.4.0