61
VTP Process Photodiodes VTP8350H
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a thick
layer of clear epoxy. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
PACKAGE DIMENSIONS inch (mm)
CASE 11 CERAMIC
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Operating Temperature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
VTP8350H
UNITS
Min. Typ. Max.
I
SC
Short Circuit Current H = 100 fc, 2850 K 65 80 µA
TC I
SC
I
SC
Temperature Coefficient 2850 K .20 %/°C
V
OC
Open Circuit Voltage H = 100 fc, 2850 K 350 mV
TC V
OC
V
OC
Temperature Coefficient 2850 K -2.0 mV/°C
I
D
Dark Current H = 0, VR = 10 V 30 nA
R
SH
Shunt Resistance H = 0, V = 10 mV 100 GΩ
C
J
Junction Capacitance H = 0, V = 3 V 50 pF
Re Responsivity 940 nm .06 A/(W/cm
2
)
S
R
Sensitivity @ Peak .55 A/W
λ
range
Spectral Application Range 400 1150 nm
λ
p
Spectral Response - Peak 925 nm
V
BR
Breakdown Voltage 33 140 V
θ
1/2
Angular Resp. - 50% Resp. Pt. ±60 Degrees
NEP Noise Equivalent Power 1.8 x 10
-13
(Typ.)
D* Specific Detectivity 1.5 x 10
12
(Typ.)
WHz⁄
cm Hz W⁄
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
