BC846B RFG

BC846A/B, BC847A/B/C, BC848A/B/C
FEATURES
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) under plate
- Pb free and RoHS compliant
- Halogen-free according to IEC 61249-2-21
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 8mg (approximately)
SYMBOL UNIT
P
D
mW
I
C
A
T
J
, T
STG
°C
SYMBOL UNIT
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
V
CB
= 30V I
E
= 0 I
CBO
nA
V
EB
= 5 V I
C
=0 I
EBO
μA
Collector-Emitter Saturation Voltage
I
C
= 100mA I
B
= 5mA V
CE(sat)
V
Base-Emitter Saturation Voltage
I
C
= 100mA I
B
= 5mA V
BE(sat)
V
Transition frequency
V
CE
= 5V I
C
= 10 mA
f= 100MHz
f
T
MHz
Document Number: DS_S1404004 Version: H15
- Epitaxial planar die construction
- Surface mount device type
Taiwan Semiconductor
VALUE
Small Signal Product
200mW, NPN Small Si
g
nal Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
SOT-23
MECHANICAL DATA
BC847
BC848
Power dissipation 200
V
CBO
Collector-Base Voltage
V
(BR)EBO
V
6
6
5
PARAMETER
V
Collector-Emitter Breakdown Voltage
I
C
= 10mA I
B
= 0
V
65
45
30
Collector-Emitter Voltage
Emitter-Base Voltage
BC848 5
V
CEO
BC846
BC846
BC847
BC848
BC846
BC847
V
V
V
80
50
30
65
45
30
Collector Current
Junction and Storage Temperature Range
0.1
-55 to +150
6
6
V
EBO
PARAMETER
Collector-Base Breakdown Voltage
I
C
= 10μAI
E
= 0
80
50
30
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
BC846A, BC847A, BC848A
V
CE
= 5V I
C
= 2mA
V
(BR)CBO
h
FE
Emitter-Base Breakdown Voltage
I
E
= 1μAI
C
= 0
V
(BR)CEO
BC846B, BC847B, BC848B
BC847C, BC848C
220
450
800
200
420
-
0.5
1.1
-
-
-100
Notes: 1. Valid provided that electrodes are kept at ambient temperature
-
110
MAX
-
-
-
100
0.1
MIN
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1404004 Version: H15
BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
0.1
1
10
100
1 10 100 1000
C
ob
[pF], Capacitance
V
CB
[V], Collector-Base Voltage
Fig.5 Collector Output Capacitance
f=1MHz
1
10
100
1000
0.1 1 10 100
f
T
[MHz], Current Gain-Bandwidth Product
I
C
[mA], Collector Current
Fig. 6 Current Gain Bandwidth Product
V
CE
=5V
0
20
40
60
80
100
0 4 8 12 16 20
I
C
[mA], Collector Current
V
CE
[V], Collector-Emitter Voltage
Fig.1 Static Characteristic
I
B
= 400
μ
A
I
B
= 350
μ
A
I
B
= 300μA
I
B
= 250
μ
A
I
B
= 200
μ
A
I
B
= 150
μ
A
I
B
= 100
μ
A
I
B
= 50
μ
A
0
100
200
300
400
0 1 10 100 1000
Fig.2 DC Current Gain
V
CE
= 5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= -55 °C.
h
FE
I
C
(mA)
(1)
(2)
(3)
0
200
400
600
800
1000
1200
0.1 1 10 100 1000
Fig.3 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
V
CE
= 5 V.
(1) T
amb
= -55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
V
BE
(mV)
(1)
(2)
(3)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
I
C
[mA], Collector Current
V
BE
[V], Base-Emitter Voltage
Fig. 4 Base-Emitter On Voltage
V
CE
= 2V
PART NO.
Note 1: "xx" is device code from "BC846A" ~ "BC848C", detail could follow the previous page
PART NO.
BC846A
DIMENSIONS
Min Max Min Max
A 2.70 3.10 0.106 0.122
B 1.10 1.50 0.043 0.059
C 0.30 0.51 0.012 0.020
D 1.78 2.04 0.070 0.080
E 2.10 2.64 0.083 0.104
F 0.89 1.30 0.035 0.051
G
H
SUGGEST PAD LAYOUT
Z
X
Y
C
E
MARKING CODE
PART NO.
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
Document Number: DS_S1404004 Version: H15
2.90
0.80 0.031
0.90 0.035
2.00 0.079
0.022 REF
0.1 REF 0.004 REF
SOT-23
DIM.
Unit (mm) Unit (inch)
Typ.
GSOT-23
3K / 7" Reel
R5
DIM.
Unit (mm) Unit (inch)
EXAMPLE
EXAMPLE P/N PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
BC846A RFG RF G Green compound
ORDERING INFORMATION
PACKING CODE
PACKING CODE
SUFFIX
PACKAGE PACKING
RF
10K / 13" Reel
BC84xx
(Note 1)
1.35 0.053
MARKING
1A
1B
1E
1F
1G
1J
1K
1L
BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
Small Signal Product
0.114
Typ.
0.55 REF

BC846B RFG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Bipolar Transistors - BJT Transistor 200mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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