2SC6114
Transistors
2/3
zElectrical characteristics (Ta=25°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Output capacitance
Parameter Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
50
50
5
−
−
−
120
−
−
−
−
−
−
−
−
−
130
1.0
−
−
−
0.1
0.1
0.3
390
−
−
VI
C
=1mA
I
C
=50µA
I
E
=50µA
V
CB
=50V
V
EB
=5V
I
C
/I
B
=25mA/2.5mA
V
CE
=6V, I
C
=2mA
V
CE
=10V, I
E
=−1mA, f=100MHz
V
CE
=10V, I
E
=0A, f=1MHz
V
V
µA
µA
V
−
MHz
pF
Typ. Max. Unit Conditions
Transition frequency
h
FE RANK
Rank Q R
h
FE
120 to 270 180 to 390
zElectrical characterristic curves
Fig.1 Grounded emitter propagation
characteristics
0.1 1 10
COLLECTOR CURRENT : Ic (
mA)
100
0.1
1
10
V
CE
= −6V
BASE TO EMITTER VOLTAGE : V
BE
(
V)
Ta=125˚C
25˚C
−40˚C
Fig.2 DC current gain vs.
collector current (Ι)
1000
100
10
0.1 1 10 100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Ta=25˚C
V
CE
= 6V
2V
Fig.3 DC current gain vs.
collector current (ΙΙ)
1000
100
10
0.1 1 10 100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
V
CE
=6V
Ta=125˚C
25˚C
−40˚C
Fig.4 Collector-emitter saturation
voltage vs. collector current
0.1 1 10 100
0.01
0.1
1
Ic/Ib=10/1
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR EMITTER SATURATION
VOLTAGE : V
CE(sat)
(
V)
Ta=125˚C
25˚C
−40˚C
Fig.5
Collector output capacitance
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
0.01 0.1 1 10 100
1
10
Ta=25˚C
f=1MHz
I
E
=
0A
Fig.6 Typical output characteristics
0 12345678910
50
40
30
20
10
I
B
=50uA
I
B
=100uA
I
B
=150uA
I
B
=200uA
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
