NXP Semiconductors
PMPB47XP
30 V, single P-channel Trench MOSFET
PMPB47XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 5 December 2012 6 / 14
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= 12 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nA
V
GS
= -4.5 V; I
D
= -4 A; T
j
= 25 °C - 47 58 mΩ
V
GS
= -4.5 V; I
D
= -4 A; T
j
= 150 °C - 72 88 mΩ
V
GS
= -2.5 V; I
D
= -3 A; T
j
= 25 °C - 54 71 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -1.8 V; I
D
= -2.1 A; T
j
= 25 °C - 74 107 mΩ
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -4 A; T
j
= 25 °C - 20 - S
R
G
gate resistance f = 1 MHz - 5.1 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 14 21 nC
Q
GS
gate-source charge - 2.5 - nC
Q
GD
gate-drain charge
V
DS
= -15 V; I
D
= -4 A; V
GS
= -4.5 V;
T
j
= 25 °C
- 4 - nC
C
iss
input capacitance - 1365 - pF
C
oss
output capacitance - 105 - pF
C
rss
reverse transfer
capacitance
V
DS
= -15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 90 - pF
t
d(on)
turn-on delay time - 15 - ns
t
r
rise time - 33 - ns
t
d(off)
turn-off delay time - 28 - ns
t
f
fall time
V
DS
= -15 V; I
D
= -4 A; V
GS
= -4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 20 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -1.9 A; V
GS
= 0 V; T
j
= 25 °C - -0.7 -1.2 V
V
DS
(V)
0 -4-3-1 -2
017aaa886
-4
-8
-12
I
D
(A)
0
-4.5 V
-2.5 V
-2 V
-1.9 V
-1.8 V
-1.7 V
-1.6 V
V
GS
= -1.5 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa887
V
GS
(V)
0 -1.2-0.8-0.4
-10
-5
-10
-4
-10
-3
-10
-2
I
D
(A)
-10
-6
min typ max
T
j
= 25 °C; V
DS
= -5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage