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MBRF20H200CT-E3/45

P1-P3P4-P5
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
Document Number: 88786
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
• Guarding for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
RRM
200 V
I
FSM
290 A
V
F
0.75 V
T
J
175 °C
TO-262AA
MBR20H200CT
MBRF20H200CT
SB20H200CT-1
CASE
PIN 2
PIN 1
PIN 3
1
1
2
2
3
3
TO-220AB
1
2
3
ITO-220AB
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR20H200CT UNIT
Maximum repetitive peak reverse voltage V
RRM
200 V
Working peak reverse voltage V
RWM
200 V
Maximum DC blocking voltage V
DC
200 V
Maximum average forward rectified current
total device
per diode
I
F(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
290 A
Peak repetitive reverse current per diode at t
p
= 2 μs, 1 kHz I
RRM
1.0 A
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform) E
RSM
20 mJ
Non-repetitive avalanche energy per diode at 25 °C, I
AS
= 2.0 A, L = 10 mH E
AS
20 mJ
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R 0 1.5 k:
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute V
AC
1500 V
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88786
Revision: 18-Apr-08
2
Note:
(1) Pulse test: 300μs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST
SYMBOL TYP. MAX. UNIT
Maximum instantaneous
forward voltage per diode
(1)
I
F
= 10 A
I
F
= 10 A
I
F
= 20 A
I
F
= 20 A
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
V
F
0.81
0.65
0.87
0.74
0.88
0.75
0.97
0.85
V
Maximum reverse current per
diode at working peak reverse
voltage
(1)
T
J
= 25 °C
T
J
= 125 °C
I
R
5.0
1.0
μA
mA
Typical junction capacitance 4.0 V, 1 MHz C
J
250 pF
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF SB UNIT
Typical thermal resistance per diode R
TJC
2.0 4.0 2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR20H200CT-E3/45 2.06 45 50/tube Tube
ITO-220AB MBRF20H200CT-E3/45 2.20 45 50/tube Tube
TO-262AA SB20H200CT-1E3/45 1.58 45 50/tube Tube
Figure 1. Forward Derating Curve (Total)
0
5
10
15
20
25
MBRF
MBR, MBRB
25 50 75 100 125 150 175
Case Temperature (°C)
Average Forward Cu
rrent (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
25
50
75
100
125
150
175
200
225
250
275
300
325
350
1 10 100
Number of Cycles at 60 Hz
Average Forward Cu
rrent (A)
MBR20H200CT, MBRF20H200CT & SB20H200CT-1
Vishay General Semiconductor
Document Number: 88786
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
0.1
1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
T
J
= 75 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
0.01
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
10 000
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
T
J
= 75 °C
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (μA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
100
1000
10 000
0.1 1 10 100
10
Reverse Voltage (V)
Junction Capacitance (pF)
0.01
101 100
10
100
0.1
0.1
1
MBRF
MBR, MBRB
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBRF20H200CT-E3/45

Mfr. #:
Buy MBRF20H200CT-E3/45
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 200 Volt 20A Dual Common-Cathode
Lifecycle:
New from this manufacturer.
Delivery:
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