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STTH806D

P1-P3P4-P6P7-P9
August 2006 Rev 2 1/9
STTH806
Turbo 2 ultrafast - high voltage rectifier
Main product characteristics
Features and benefits
■ Ultrafast switching
■ Low reverse current
■ Low thermal resistance
■ Reduces conduction and switching losses
■ Insulated package TO-220AC Ins
– Insulated voltage: 2500 V
RMS
– Typical package capacitance: 7 pF
Description
The STTH806 uses ST Turbo2 600 V technology.
This device is specially suited for use in switching
power supplies, and industrial applications.
Order codes
I
F(AV)
8 A
V
RRM
600 V
T
j
175° C
V
F
(typ) 1.1 V
t
rr
(max) 35 ns
Part Number Marking
STTH806G STTH806G
STTH806G-TR STTH806G
STTH806D STTH806D
STTH806DIRG STTH806DI
KA
TO-220AC Ins
STTH806DIRG
K
A
TO-220AC
STTH806D
K
A
D
2
PAK
STTH806G
K
A
NC
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
RMS forward current
TO-220AC, D
2
PA K 30 A
TO-220 Ins 24 A
I
F(AV)
Average forward current, δ = 0.5
T
c
= 140° C TO-220AC, D
2
PA K 8 A
T
c
= 120° C TO-220 Ins 8 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 90 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
175 °C
1. condition to avoid thermal runaway for a diode on its own heatsink
dP
tot
dT
j
---------------
1
R
th j a–()
--------------------------<
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Characteristics STTH806
2/9
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.07 x I
F(AV)
+ 0.041 I
F
2
(RMS)
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AC, D
2
PAK 2. 5
° C/W
TO-220AC Ins 4
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
8
µA
T
j
= 150° C 20 200
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 8 A
1.85
V
T
j
= 150° C 1.10 1.40
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A,
T
j
= 25° C
35
ns
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
40 55
I
RM
Reverse recovery current
I
F
= 8 A, dI
F
/dt = -100 A/µs,
V
R
= 400 V, T
j
= 25° C
4.5 6.5
t
fr
Forward recovery time
I
F
= 8 A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
200 ns
V
FP
Forward recovery voltage
I
F
= 8 A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
3.5 V
STTH806 Characteristics
3/9
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
0.0
2.5
5.0
7.5
10.0
12.5
15.0
012345678910
P (W)
F(AV)
I (A)
F(AV)
T
δ
=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 1
δ = 0.5
0
10
20
30
40
50
60
70
80
90
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I (A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
t (s)
p
Single pulse
0
2
4
6
8
10
12
14
0 50 100 150 200 250 300 350 400 450 500
I (A)
RM
dI /dt(A/µs)
F
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
I =0.25 x I
F F(AV)
V =400V
T =125°C
R
j
Figure 5. Reverse recovery time versus
dI
F
/dt (typical values)
Figure 6. Reverse recovery charges versus
dI
F
/dt (typical values)
0
50
100
150
200
250
300
0 50 100 150 200 250 300 350 400 450 500
t (ns)
rr
dI /dt(A/µs)
F
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300 350 400 450 500
Q (nC)
rr
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
V =400V
T =125°C
R
j
dI /dt(A/µs)
F
P1-P3P4-P6P7-P9

STTH806D

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Manufacturer:
STMicroelectronics
Description:
Rectifiers Turbo 2 Ultrafast Hi VLTG Recitifier
Lifecycle:
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