HEXFET
®
Power MOSFET
07/22/02
IRF7606
Absolute Maximum Ratings
www.irf.com 1
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 70 °C/W
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Micro8
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
l
Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
V
DSS
= -30V
R
DS(on)
= 0.09Ω
Description
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
Parameter Max. Units
V
DS
Drain-Source Voltage -30 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V -3.6
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V -2.9 A
I
DM
Pulsed Drain Current -29
P
D
@T
A
= 25°C Maximum Power Dissipation 1.8 W
P
D
@T
A
= 70°C Maximum Power Dissipation 1.1 W
Linear Derating Factor 14 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
V
GSM
Gate-to-Source Voltage Single Pulse tp<10µS 30 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
PD - 91264E
