Characteristics STTH60AC06C
2/13 DocID024886 Rev3
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.01 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600 V
I
F(RMS)
Forward rms current 50 A
I
F(AV)
Average forward current
Per diode 30
A
Per device 60
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
280 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature 175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (TO3P-3L, TO-247, TO-247 LL)
Per diode 0.9
°C/W
Total 0.55
R
th(c)
Coupling (TO3P-3L, TO-247, TO-247 LL) 0.2
R
th(j-c)
Junction to case (TO-3PF)
Per diode 2.8
Total 2.2
R
th(c)
Coupling (TO-3PF) 1.6
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
10
µA
T
j
= 150 °C 40 400
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 30 A
1.75
V
T
j
= 150 °C 1.07 1.40
T
j
= 25 °C
I
F
= 60 A
2
T
j
= 150 °C 1.32 1.7
1. Pulse test: t
p
= 5 ms, < 2%
2. Pulse test: t
p
= 380 µs, < 2%
