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MRF6S27085HR5

P1-P3P4-P6P7-P9P10-P11
MRF6S27085HR3 MRF6S27085HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2600 to
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
• Typical Single-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
=
900 mA, P
out
= 20 Watts Avg., f = 2660 MHz, IS-95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 23.5%
ACPR @ 885 kHz Offset — -48 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +68 Vdc
Gate- Source Voltage V
GS
-0.5, +12 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature
(1,2)
T
J
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 85 W CW
Case Temperature 76°C, 20 W CW
R
θ
JC
0.50
0.56
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S27085H
Rev. 3, 12/2008
Freescale Semiconductor
Technical Data
MRF6S27085HR3
MRF6S27085HSR3
2600- 2700 MHz, 20 W AVG., 28 V
SINGLE N-CDMA
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465A- 06, STYLE 1
NI- 780S
MRF6S27085HSR3
CASE 465- 06, STYLE 1
NI- 780
MRF6S27085HR3
Freescale Semiconductor, Inc., 2005- 2006, 2008. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 3A (Minimum)
Machine Model (per EIA/JESD22- A115) A (Minimum)
Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250 µAdc)
V
GS(th)
1 2 3 Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
V
GS(Q)
2 2.8 4 Vdc
Drain- Source On- Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
— 0.21 0.3 Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 2.8 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 20 W Avg. N-CDMA, f = 2660 MHz,
Single-Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
14 15.5 17 dB
Drain Efficiency η
D
21 23.5 — %
Adjacent Channel Power Ratio ACPR — -48 -45 dBc
Input Return Loss IRL — -13 -9 dB
1. Part is internally matched both on input and output.
MRF6S27085HR3 MRF6S27085HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic
Z10 0.287″ x 0.753″ Microstrip
Z11 0.220″ x 0.384″ Microstrip
Z12 0.122″ x 0.580″ Microstrip
Z13 0.266″ x 0.148″ Microstrip
Z14 0.130″ x 0.425″ Microstrip
Z15 0.380″ x 0.081″ Microstrip
Z16 0.703″ x 0.081″ Microstrip
PCB Arlon GX- 0300- 5022, 0.030″, ε
r
= 2.5
Z1 0.672″ x 0.081″ Microstrip
Z2 0.050″ x 0.250″ Microstrip
Z3 0.288″ x 0.081″ Microstrip
Z4 0.200″ x 0.480″ Microstrip
Z5 0.270″ x 0.172″ Microstrip
Z6 0.260″ x 0.810″ Microstrip
Z7 0.366″ x 0.490″ Microstrip
Z8 0.083″ x 0.490″ Microstrip
Z9 0.091″ x 0.753″ Microstrip
RF
INPUT
DUT
C1
Z8
Z7Z6Z5Z4Z3Z2Z1
C3
R1
B2
L1
C8C9C10C11
V
BIAS
B1
Z9 Z10 Z11 Z12 Z13 Z14 Z15
C2
RF
OUTPUT
Z16
C4 C5
C6
+
V
SUPPLY
C7
+
+ +
Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead, Surface Mount 2508051107Y0 Fair- Rite
B2 Ferrite Bead, Surface Mount 2743019447 Fair- Rite
C1, C2 4.7 pF Chip Capacitors ATC100B4R7CT500XT ATC
C3 3.6 pF Chip Capacitor ATC100B3R6CT500XT ATC
C4 10 µF, 50 V Chip Capacitor GRM55DR61H106KA88B Murata
C5, C8 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC Kemet
C6 47 µF, 50 V Electrolytic Capacitor EMVK500ADA470MF80G United Chemi- Con
C7 330 µF, 63 V Electrolytic Capacitor EKMG630ELL331MJ20S United Chemi- Con
C9 0.01 µF Chip Capacitor C1825C103J1RAC Kemet
C10 22 µF, 25 V Tantalum Capacitor T491D226K025AT Kemet
C11 47 µF, 16 V Tantalum Capacitor T491D476K016AT Kemet
L1 15 nH, Chip Inductor L0603150GGW AVX
R1
3.3 W, 1/3 W Chip Resistor
CRCW12103R30FKEA Vishay
P1-P3P4-P6P7-P9P10-P11

MRF6S27085HR5

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Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV6 2700MHZ NCDMA NI780H
Lifecycle:
New from this manufacturer.
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