6
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
TYPICAL CHARACTERISTICS
−70
−30
−40
−45
−50
−60
−35
−55
−65
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
−60
0
0.1
7th Order
TWO−TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 85 W (PEP), I
DQ
= 900 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2645 MHz
5th Order
3rd Order
−10
−20
−30
−40
−50
1 100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. Single-Carrier N-CDMA ACPR, ALT1,
Power Gain and Drain Efficiency versus Output
Power
5
P
out
, OUTPUT POWER (WATTS) AVG. W−CDMA
45
35
30
10
10 100
20
40
56
31
P
in
, INPUT POWER (dBm)
54
52
50
46
32 3433 3635 3937
55
51
53
49
3830
0
20
5
45
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc, I
DQ
= 900 mA
f = 2645 MHz
10
17.5
15
10
5
2.5
40
30
25
20
15
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 24 V
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ACPR (dBc), ALT1 (dBc)
η
D
, DRAIN EFFICIENCY (%)
η
D
G
ps
, POWER GAIN (dB)
11
16
1 100
13
12
10
15
14
I
DQ
= 900 mA
f = 2645 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
48
47
η
D
100
32 V
Actual
Ideal
P1dB = 51 dBm (126.74 W)
P3dB = 51.72 dBm (148.54 W)
40
25
15
V
DD
= 28 Vdc, I
DQ
= 900 mA, f = 2645 MHz
Single−Carrier N−CDMA, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
ALT1
12.5
7.5
35
28 V
G
ps
G
ps
V
DD
= 28 Vdc, I
DQ
= 900 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 2645 MHz
