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SI3433CDV-T1-GE3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 68803
S09-0387-Rev. B, 09-Mar-09
Vishay Siliconix
Si3433CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V (V)
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T
J
= 25 °C
T
J
= 125 °C
I
D
= - 5.2 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
10
20
30
40
10 10000.10.010.001 1001
Time (s)
Power (W)
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
DC
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
1 s, 10 s
Document Number: 68803
S09-0387-Rev. B, 09-Mar-09
www.vishay.com
5
Vishay Siliconix
Si3433CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0 25 50 75 100 125 150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Foot
0
1
2
3
4
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68803
S09-0387-Rev. B, 09-Mar-09
Vishay Siliconix
Si3433CDV
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68803
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=110 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
1
10
100010
-1
10
-4
100
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
1
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
Duty Cycle = 0.5
0.05
0.02
Single Pulse
0.1
1
0.1
0.01
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
110
-1
10
-4
P1-P3P4-P6P7-P9P10-P11

SI3433CDV-T1-GE3

Mfr. #:
Buy SI3433CDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 8V Vgs TSOP-6
Lifecycle:
New from this manufacturer.
Delivery:
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