NXP Semiconductors
PMPB27EP
30 V, single P-channel Trench MOSFET
PMPB27EP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 10 September 2012 6 / 14
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nA
V
GS
= -10 V; I
D
= -6.1 A; T
j
= 25 °C - 24 29 mΩ
V
GS
= -10 V; I
D
= -6.1 A; T
j
= 150 °C - 37 45 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -5 A; T
j
= 25 °C - 32 43 mΩ
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -6.1 A; T
j
= 25 °C - 26 - S
R
G
gate resistance f = 1 MHz - 5.4 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 30 45 nC
Q
GS
gate-source charge - 4.8 - nC
Q
GD
gate-drain charge
V
DS
= -15 V; I
D
= -6.1 A; V
GS
= -10 V;
T
j
= 25 °C
- 6.3 - nC
C
iss
input capacitance - 1570 - pF
C
oss
output capacitance - 170 - pF
C
rss
reverse transfer
capacitance
V
DS
= -15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 150 - pF
t
d(on)
turn-on delay time - 10 - ns
t
r
rise time - 31 - ns
t
d(off)
turn-off delay time - 28 - ns
t
f
fall time
V
DS
= -15 V; I
D
= -6.1 A; V
GS
= -10 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 19 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -1.9 A; V
GS
= 0 V; T
j
= 25 °C - -0.8 -1.2 V
V
DS
(V)
0 -4-3-1 -2
017aaa828
-8
-16
-24
I
D
(A)
0
-10 V
-4.5 V -4 V
V
GS
= -3.7 V
-3.5 V
-3.2 V
-2.8 V
-3 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa829
V
GS
(V)
0 -3-2-1
-10
-5
-10
-4
-10
-3
-10
-2
I
D
(A)
-10
-6
min typ max
T
j
= 25 °C; V
DS
= -5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
