NSR2030QMUTAG

© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 0
Publication Order Number:
NSR2030QMU/D
NSR2030QMUTAG
2A, 30V Schottky Full Bridge
These full bridge Schottky barrier diodes are designed for the
rectification of the high speed signal of wireless charging. The
NSR2030QMUTAG has a very low forward voltage that will reduce
conduction loss. It is housed in a UDFN 3.5 x 3.5 x 0.5 mm package
that is ideal for space constrained wireless applications.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.54 V (Typ) @ I
F
= 2 A
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Typical Applications
Low Voltage Full Bridge Rectification & Wireless Charging
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Current (DC) I
F
2.0 A
Forward Current Surge Peak
(60 Hz, 1 cycle)
I
FSM
12.5 A
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to surge)
t = 1 ms
t = 1 ms
t = 1 s
I
FSM
40
10
3.0
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. All specifications pertain to a single diode.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
T
A
= 25°C
Derate above 25°C
P
D
(Note 2)
2.08
20.8
W
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
(Note 2)
48 °C/W
Total Device Dissipation FR-5 Board
T
A
= 25°C
Derate above 25°C
P
D
(Note 3)
0.75
7.6
W
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
(Note 3)
132 °C/W
Total Device Dissipation FR-5 Board
T
A
= 25°C
Derate above 25°C
P
D
(Note 4)
0.87
8.8
W
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
(Note 4)
114 °C/W
Junction Temperature T
J
+125 °C
Storage Temperature Range T
stg
−55 to
+150
°C
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm
2
, 1 oz. copper trace, still air.
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm
2
, 1 oz. copper trace, still air.
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm
2
, 2 oz. copper trace, still air.
MARKING
DIAGRAM
Device Package Shipping
ORDERING INFORMATION
UDFN4 3.5x3.5
CASE 517DA
www.onsemi.com
M
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSR2030QMUTAG UDFN4
(Pb−Free)
3000 / Tape &
Reel
2030
AYWWG
G
1
2030 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
DEVICE SCHEMATIC
NSR2030QMUTAG
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I
R
= 1.0 mA) V
(BR)
30 V
Reverse Leakage (V
R
= 30 V) I
R
5.0 20
mA
Forward Voltage (I
F
= 0.5 A) V
F
0.41 0.455 V
Forward Voltage (I
F
= 1.0 A) V
F
0.46 0.55 V
Forward Voltage (I
F
= 2.0 A) V
F
0.54 0.65 V
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA)
t
rr
34 ns
Input Capacitance (pins 1 to 3) (V
R
= 1.0 V, f = 1.0 MHz) C
T
102 pF
5. All specifications pertain to a single diode.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
NSR2030QMUTAG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Forward Voltage Figure 2. Reverse Leakage
Figure 3. Input Capacitance Figure 4. Forward Surge Current
0.001
0.01
0.1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6
1.0E−09
1.0E−07
1.0E−05
1.0E−01
5 10152025
I
R
, REVERSE CURRENT (mA)
125°C
85°C
150°C
−55°C
25°C
150°C
85°C
25°C
125°C
30
40
50
60
70
80
90
100
0 5 10 15 20
30
1.0E−03
V
R
, REVERSE VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
25 30
C
I
, INPUT CAPACITANCE (pF)
25 30
V
R
, REVERSE VOLTAGE (V)
V
F
, FORWARD VOLTAGE (V)
1.0E−10
1.0E−08
1.0E−06
1.0E−02
1.0E−04
−55°C
1
T
A
= 25°C
110
Based on square wave currents
T
J
= 25°C prior to surge
0
5
10
15
20
25
30
35
0.001 0.01 0.1 1 10 100 1000
I
FSM
, FORWARD SURGE MAX CURRENT (A)
T
p
, PULSE ON TIME (ms)
40
45
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
r(t)
(°C/W)
PULSE TIME (s)
Figure 5. Thermal Response
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100
0
0.1
1
10
100

NSR2030QMUTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 2A 30 V SCHOTTKY FUL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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