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NGTB25N120FL2WG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2016
December, 2016 − Rev. 2
1 Publication Order Number:
NGTB25N120FL2W/D
NGTB25N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• T
Jmax
= 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS)
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
1200 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
50
25
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
100 A
Diode forward current
@ T
C = 25°C
@ TC = 100°C
I
F
50
25
A
Diode pulsed current, T
pulse
limited
by T
Jmax
I
FM
100 A
Gate−emitter voltage
Transient gate−emitter voltage
(T
pulse
= 5 ms, D < 0.10)
V
GE
$20
±30
V
Power Dissipation
@ T
C = 25°C
@ TC = 100°C
P
D
385
192
W
Short Circuit Withstand Time
V
GE
= 15 V, V
CE
= 500 V, T
J
≤ 150°C
T
SC
10
ms
Operating junction temperature
range
T
J
−55 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247
CASE 340AL
C
G
25 A, 1200 V
V
CEsat
= 2.0 V
E
off
= 0.60 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB25N120FL2WG TO−247
(Pb−Free)
30 Units / Ra
il
www.onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
25N120FL2
AYWWG
G
E
C
NGTB25N120FL2WG
www.onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.39 °C/W
Thermal resistance junction−to−case, for Diode
R
q
JC
0.59 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
1200 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 25 A
V
GE
= 15 V, I
C
= 25 A, T
J
= 175°C
V
CEsat
−
−
2.00
2.40
2.40
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 400 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
=
175°C
I
CES
−
−
−
2.5
0.4
−
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V , V
CE
= 0 V I
GES
− − 200 nA
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 4420 −
pF
Output capacitance C
oes
− 151 −
Reverse transfer capacitance C
res
− 81 −
Gate charge total
V
CE
= 600 V, I
C
= 25 A, V
GE
= 15 V
Q
g
− 178 −
nC
Gate to emitter charge Q
ge
− 39 −
Gate to collector charge Q
gc
− 83 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 600 V, I
C
= 25 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(on)
− 87 −
ns
Rise time t
r
− 28 −
Turn−off delay time t
d(off)
− 179 −
Fall time t
f
− 136 −
Turn−on switching loss E
on
− 1.95 −
mJ
Turn−off switching loss E
off
− 0.60 −
Total switching loss E
ts
− 2.55 −
Turn−on delay time
T
J
= 150°C
V
CC
= 600 V, I
C
= 25 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(on)
− 84 −
ns
Rise time t
r
− 29 −
Turn−off delay time t
d(off)
− 185 −
Fall time t
f
− 245 −
Turn−on switching loss E
on
− 2.39 −
mJ
Turn−off switching loss E
off
− 1.26 −
Total switching loss E
ts
− 3.65 −
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 25 A
V
GE
= 0 V, I
F
= 50 A, T
J
= 175°C
V
F
−
−
2.10
2.30
2.60
−
V
Reverse recovery time
T
J
= 25°C
I
F
= 25 A, V
R
= 400 V
di
F
/dt = 200 A/ms
t
rr
− 154 − ns
Reverse recovery charge Q
rr
− 1.3 −
mc
Reverse recovery current I
rrm
− 15 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NGTB25N120FL2WG
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
86543210
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
GE
, GATE−EMITTER VOLTAGE (V)
80
Figure 5. V
CE(sat)
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
1751501251007550250
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
7
V
GE
= 13 V
to 20 V
T
J
= 25°C
9 V
8 V
7 V
8654321
I
C
, COLLECTOR CURRENT (A)
7
T
J
= 150°C
9 V
8 V
7 V
86543210
I
C
, COLLECTOR CURRENT (A)
7
T
J
= −55°C
9 V
8 V
T
J
= 25°C
T
J
= 150°C
200
V
GE
= 13 V
to 20 V
V
GE
= 13 V
to 20 V
2457
−75 −50 −25
2.5
2.0
1.5
1.0
0.5
0
Figure 6. Typical Capacitance
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
908050403020100
C, CAPACITANCE (pF)
100
C
ies
C
oes
C
res
7060
10 V
11 V
10 V
11 V
10 V
11 V
9
T
J
= 25°C
35
30
25
15
10
5
0
10,000
1000
100
1
100
0
40
45
12 13 15
4.0
80
70
60
40
30
20
10
0
100
90
80
60
40
30
20
10
0
100
90
80
60
40
30
20
10
0
50
50
1110631
20
10
50
90
70
70
14
3.0
3.5
I
C
= 25 A
I
C
= 15 A
I
C
= 50 A
P1-P3P4-P6P7-P9P10-P10

NGTB25N120FL2WG

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/25 FAST IGBT FSII T
Lifecycle:
New from this manufacturer.
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