IPB60R165CPATMA1 Datasheet IPB60R165CPATMA1 | P1-P3

IPB60R165CP

CoolMOS

®

Power Transistor

Features

• Lowest figure-of-merit R

ON

xQ

g

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1)

for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching topologies for Server and Telecom

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25 °C

A

T

C

=100 °C

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

Avalanche energy, single pulse

E

AS

I

D

=7.9 A, V

DD

=50 V

522 mJ

Avalanche energy, repetitive t

AR

2),3)

E

AR

I

D

=7.9 A, V

DD

=50 V

Avalanche current, repetitive t

AR

2),3)

I

AR

A

MOSFET dv/dt ruggedness dv /dt

V

DS

=0...480 V

V/ns

Gate source voltage

V

GS

static V

AC (f >1 Hz)

Power dissipation

P

tot

T

C

=25 °C

W

Operating and storage temperature

T

j

, T

stg

°C

±30

192

-55 ... 150

0.79

7.9

50

±20

Value

21

13

61

V

DS

@ T

j,max

650 V

R

DS(on),max

0.165

Ω

Q

g,typ

39 nC

Product Summary

Type Package Ordering Code Marking

IPB60R165CP PG-TO263 SP000096439 6R165P

PG-TO263

Rev. 2.1 page 1 2009-06-05

IPB60R165CP

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous diode forward current

I

S

A

Diode pulse current

2)

I

S,pulse

61

Reverse diode dv /dt

4)

dv /dt 15 V/ns

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 0.65 K/W

R

thJA

SMD version, device

on PCB, minimal

footprint

--62

SMD version, device

on PCB, 6 cm

2

cooling

area

5)

35

Soldering temperature,

reflowsoldering

T

sold

reflow MSL 1 - - 260 °C

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

=250 µA

600 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=0.79 mA

2.5 3 3.5

Zero gate voltage drain current

I

DSS

V

DS

=600 V, V

GS

=0 V,

T

j

=25 °C

--1µA

V

DS

=600 V, V

GS

=0 V,

T

j

=150 °C

-10-

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10 V, I

D

=12 A,

T

j

=25 °C

- 0.15 0.165

Ω

V

GS

=10 V, I

D

=12 A,

T

j

=150 °C

- 0.40 -

Gate resistance

R

G

f =1 MHz, open drain - 1.9 -

Ω

Value

T

C

=25 °C

12

Values

Thermal resistance, junction -

ambient

Rev. 2.1 page 2 2007-11-22

IPB60R165CP

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 2000 - pF

Output capacitance

C

oss

- 100 -

Effective output capacitance, energy

C

o(er)

-83-

Effective output capacitance, time

C

o(tr)

- 220 -

Turn-on delay time

t

d(on)

-12-ns

Rise time

t

r

-5-

Turn-off delay time

t

d(off)

-50-

Fall time

t

f

-5-

Gate Charge Characteristics

Gate to source charge

Q

gs

-9-nC

Gate to drain charge

Q

gd

- 13.0 -

Gate charge total

Q

g

-3952

Gate plateau voltage

V

plateau

- 5.0 - V

Reverse Diode

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=12 A,

T

j

=25 °C

- 0.9 1.2 V

Reverse recovery time

t

rr

- 390 - ns

Reverse recovery charge

Q

rr

- 7.5 - µC

Peak reverse recovery current

I

rrm

-38-A

1)

J-STD20 and JESD22

2)

Pulse width t

p

limited by T

j,max

7)

C

o(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 to 80% V

DSS.

4)

I

SD

≤I

D

, di/dt≤200A/µs,V

DClink

=400V, V

peak

<V

(BR)DSS

, T

j

<T

jmax

, identical low side and high side switch.

V

R

=400 V, I

F

=I

S

,

di

F

/dt =100 A/µs

5)

Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB

is vertical without blown ai

r

6)

C

o(er)

is a fixed capacitance that gives the same stored energy as C

oss

while V

DS

is rising from 0 to 80% V

DSS.

3)

Repetitive avalanche causes additional power losses that can be calculated as P

AV

=E

AR

*f.

Values

V

GS

=0 V, V

DS

=100 V,

f =1 MHz

V

DD

=400 V,

V

GS

=10 V, I

D

=12 A,

R

G

=3.3 Ω

V

DD

=400 V, I

D

=12 A,

V

GS

=0 to 10 V

V

GS

=0 V, V

DS

=0 V

to 480 V

Rev. 2.1 page 3 2007-11-22

IPB60R165CPATMA1

IPB60R165CPATMA1

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