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2N3771G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 11
1 Publication Order Number:
2N3771/D
2N3771, 2N3772
2N3771 is a Preferred Device
High Power NPN Silicon
Power Transistors
These devices are designed for linear amplifiers, series pass
regulators, and inductive switching applications.
Features
• Forward Biased Second Breakdown Current Capability
I
S/b
= 3.75 Adc @ V
CE
= 40 Vdc − 2N3771
= 2.5 Adc @ V
CE
= 60 Vdc − 2N3772
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol 2N3771 2N3772 Unit
Collector−Emitter Voltage V
CEO
40 60 Vdc
Collector−Emitter Voltage V
CEX
50 80 Vdc
Collector−Base Voltage V
CB
50 100 Vdc
Emitter−Base Voltage V
EB
5.0 7.0 Vdc
Collector Current − Continuous
Peak
I
C
30
30
20
30
Adc
Base Current − Continuous
Peak
I
B
7.5
15
5.0
15
Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
150
0.855
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
q
JC
1.17 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
20 and 30 AMPERE
POWER TRANSISTORS
NPN SILICON
40 and 60 VOLTS, 150 WATTS
MARKING
DIAGRAM
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N377x = Device Code
x = 1 or 2
G = Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
2N377xG
AYYWW
MEX
2N3772 TO−204 100 Units / Tray
2N3772G TO−204
(Pb−Free)
100 Units / Tray
Device Package
Shipping
2N3771 TO−204 100 Units / Tray
2N3771G TO−204
(Pb−Free)
100 Units / Tray
ORDERING INFORMATION
2N3771, 2N3772
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2 and 3) 2N3771
(I
C
= 0.2 Adc, I
B
= 0) 2N3772
V
CEO(sus)
40
60
−
−
Vdc
Collector−Emitter Sustaining Voltage 2N3771
(I
C
= 0.2 Adc, V
EB(off)
= 1.5 Vdc, R
BE
= 100 W) 2N3772
V
CEX(sus)
50
80
−
−
Vdc
Collector−Emitter Sustaining Voltage 2N3771
(I
C
= 0.2 Adc, R
BE
= 100 W) 2N3772
V
CER(sus)
45
70
−
−
Vdc
Collector Cutoff Current (Note 2)
(V
CE
= 30 Vdc, I
B
= 0) 2N3771
(V
CE
= 50 Vdc, I
B
= 0) 2N3772
(V
CE
= 25 Vdc, I
B
= 0)
I
CEO
−
−
10
10
mAdc
Collector Cutoff Current (Note 2)
(V
CE
= 50 Vdc, V
EB(off)
= 1.5 Vdc) 2N3771
(V
CE
= 100 Vdc, V
EB(off)
= 1.5 Vdc) 2N3772
(V
CE
= 45 Vdc, V
EB(off)
= 1.5 Vdc) 2N6257
(V
CE
= 30 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C) 2N3771
2N3772
(V
CE
= 45 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
I
CEV
−
−
−
−
−
2.0
5.0
4.0
10
10
mAdc
Collector Cutoff Current (Note 2)
(V
CB
= 50 Vdc, I
E
= 0) 2N3771
(V
CB
= 100 Vdc, I
E
= 0) 2N3772
I
CBO
−
−
2.0
5.0
mAdc
Emitter Cutoff Current (Note 2)
(V
BE
= 5.0 Vdc, I
C
= 0) 2N3771
(V
BE
= 7.0 Vdc, I
C
= 0) 2N3772
I
EBO
−
−
5.0
5.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (Note 3)
(I
C
= 15 Adc, V
CE
= 4.0 Vdc) 2N3771
(I
C
= 10 Adc, V
CE
= 4.0 Vdc) 2N3772
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 30 Adc, V
CE
= 4.0 Vdc) 2N3771
(I
C
= 20 Adc, V
CE
= 4.0 Vdc) 2N3772
h
FE
15
15
5.0
5.0
60
60
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 15 Adc, I
B
= 1.5 Adc) 2N3771
(I
C
= 10 Adc, I
B
= 1.0 Adc) 2N3772
(I
C
= 30 Adc, I
B
= 6.0 Adc) 2N3771
(I
C
= 20 Adc, I
B
= 4.0 Adc) 2N3772
V
CE(sat)
−
−
−
−
2.0
1.4
4.0
4.0
Vdc
Base−Emitter On Voltage
(I
C
= 15 Adc, V
CE
= 4.0 Vdc) 2N3771
(I
C
= 10 Adc, V
CE
= 4.0 Vdc) 2N3772
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
−
−
2.7
2.2
Vdc
*DYNAMIC CHARACTERISTICS (Note 2)
Current−Gain — Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f
test
= 50 kHz)
f
T
0.2 − MHz
Small−Signal Current Gain
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 kHz)
h
fe
40 − −
SECOND BREAKDOWN
Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non−repetitive)
(V
CE
= 40 Vdc) 2N3771
(V
CE
= 60 Vdc) 2N3772
I
S/b
3.75
2.5
−
−
Adc
2. Indicates JEDEC registered data.
3. Pulse Test: 300 ms, Rep. Rate 60 cps.
2N3771, 2N3772
http://onsemi.com
3
200
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
150
100
50
25
P
D
, POWER DISSIPATION (WATTS)
175
125
75
Figure 2. Thermal Response — 2N3771, 2N3772
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.05
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 2000
q
JC
(t) = r(t) q
JC
q
JC
= 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.02
1000
40
1.0
Figure 3. Active−Region Safe Operating Area
— 2N3771, 2N3772
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
30
20
10
2.0
2.0 3.0 5.0 10 30 50 70 100
7.0
I
C
, COLLECTOR CURRENT (AMP)
dc
5.0
7.0
3.0
100 ms
1.0 ms
20
2N3771
2N3772, (dc)
40 ms
100 ms
500 ms
PULSE CURVES APPLY
FOR ALL DEVICES
2N3771
2N3772
200 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
T
C
= 25°C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided T
J(pk)
< 200_C. T
J(pk)
may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, T
J(pk)
will be found to be less than T
J(max)
for pulse widths of 1 ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by T
J(max)
.
P1-P3P4-P5

2N3771G

Mfr. #:
Buy 2N3771G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 30A 40V 150W NPN
Lifecycle:
New from this manufacturer.
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