DMP2021UFDF-13 Datasheet DMP2021UFDF-7, DMP2021UFDF-13 | P1-P3

DMP2021UFDF

Document number: DS37195 Rev. 3 - 2

1 of 7

www.diodes.com

April 2015

D

MP2021UFDF

ADVANCE INFO R MA T I O N

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

max

I

D

max

T

A

= +25°C

-20V

16mΩ @ V

GS

= -4.5V

-9.0A

22mΩ @ V

GS

= -2.5V

-7.7A

Description and Applications

This MOSFET is designed to minimize on-state resistance (R

DS(ON)

)

and yet maintain superior switching performance, making it ideal for

high-efficiency power management applications.

• Battery Management Application

• Power Management Functions

• DC-DC Converters

Features and Benefits

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm

2

• Low Gate Threshold Voltage

• Low On-Resistance

• ESD protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN2020-6

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.007 grams (Approximate)

Ordering Information

(Note 4)

Part Number

Case

Packaging

DMP2021UFDF-7 U-DFN2020-6 3,000/Tape & Reel

DMP2021UFDF-13 U-DFN2020-6 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2014

2015

201

6

201

7

201

8

201

9

20

Code

B C D E F G H

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1 2 3 4 5 6 7 8 9 O N D

P1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: C = 2015)

M = Month (ex: 9 = September)

U-DFN2020-6

Equivalent Circuit

Pin1

Bottom View

Top View

Pin Out

ESD PROTECTED

Bottom View

P1

Y

M

D

S

G

Gate Protection

Diode

U-DFN2020-6

e4

DMP2021UFDF

Document number: DS37195 Rev. 3 - 2

2 of 7

www.diodes.com

April 2015

D

MP2021UFDF

ADVANCE INFO R MA T I O N

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current (Note 6) V

GS

= -4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-9.0

-7.2

A

t<10s

T

A

= +25°C

T

A

= +70°C

I

D

-11.1

-8.9

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

I

DM

-60 A

Continuous Source-Drain Diode Current (Note 6)

T

A

= +25°C

I

S

-2.4 A

Avalanche Current (Note 7) L = 0.1mH

I

A

S

-27 A

Avalanche Energy (Note 7) L = 0.1mH

E

A

S

38 mJ

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

T

A

= +25°C

P

D

0.73

W

T

A

= +70°C

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

R

θ

JA

172

°C/W

t<10s 121

Total Power Dissipation (Note 6)

T

A

= +25°C

P

D

2.02

W

T

A

= +70°C

1.30

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

R

θ

JA

63

°C/W

t<10s 42

Thermal Resistance, Junction to Case (Note 6) Steady State

R

θ

J

C

18

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150 °C

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note

8

)

Drain-Source Breakdown Voltage

BV

DSS

-20 — — V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current T

J

= +25°C I

DSS

— —

-1 µA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±10 µA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note

8

)

Gate Threshold Voltage

V

GS(th)

-0.35 — -1.0 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS (ON)

—

12 16

mΩ

V

GS

= -4.5V, I

D

= -7.0A

15 22

V

GS

= -2.5V, I

D

= -5.0A

19 40

V

GS

= -1.8V, I

D

= -3.0A

21 80

V

GS

= -1.5V, I

D

= -1.0A

Diode Forward Voltage

V

SD

—

-0.8 -1.2 V

V

GS

= 0V, I

S

= -1.0A

DYNAMIC CHARACTERISTIC

S

(Note

9

)

Input Capacitance

C

iss

— 2,760 —

pF

V

DS

= -15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

— 262 —

Reverse Transfer Capacitance

C

rss

— 220 —

Gate Resistance

R

g

— 16 30

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= -4.5V) Q

g

— 34 —

nC

V

DS

= -15V, I

D

= -4.0A

Total Gate Charge (V

GS

= -8V) Q

g

— 59 —

Gate-Source Charge

Q

gs

— 3.5 —

Gate-Drain Charge

Q

gd

— 8.3 —

Turn-On Delay Time

t

D(on)

— 7.5 —

ns

V

DS

= -15V, V

GS

= -4.5V,

R

G

= 1Ω, I

D

= -4.0A

Turn-On Rise Time

t

r

— 25 —

Turn-Off Delay Time

t

D(off)

— 125 —

Turn-Off Fall Time

t

f

— 96 —

Reverse Recovery Time

t

rr

— 48 — ns

I

F

= -1.0A, di/dt = 100A/µs

Reverse Recovery Charge

Q

rr

— 33 — nC

I

F

= -1.0A, di/dt = 100A/µs

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. I

AS

and E

AS

rating are based on low frequency and duty cycles to keep T

J

= +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMP2021UFDF

Document number: DS37195 Rev. 3 - 2

3 of 7

www.diodes.com

April 2015

D

MP2021UFDF

ADVANCE INFO R MA T I O N

V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 0.5 1 1.5 2 2.5 3

V = -1.0V

GS

V = -1.2V

GS

V = -1.5V

GS

V = -4.0V

GS

V = -8.0V

GS

V = -4.5V

GS

V = -3.0V

GS

V = -2.0V

GS

V = -1.8V

GS

V = -0.9V

GS

V = -2.5V

GS

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

I

,

D

R

A

I

N

C

U

R

E

N

T

(

A

)

D

0

2

4

6

8

10

12

14

16

18

20

0 0.5 1

1.5

2

2.5

T = 150 C

A

°

T = 125 C

A

°

T = 85 C

A

°

T = 25 C

A

°

T = -55 C

A

°

V = -5.0V

DS

I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

0

0.01

0.02

0.03

0.04

0 5 10 15 20 25 30

V = -1.8V

GS

V = -4.5V

GS

V = -1.5V

GS

V = -2.5V

GS

I , DRAIN SOURCE CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

D

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

0 2 4 6 8 10 12 14 16 18

T = -55 C

A

°

T = 25 C

A

°

T = 85 C

A

°

T = 125 C

A

°

T = 150 C

A

°

V = -4.5V

GS

20

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 5 On-Resistance Variation with Temperature

R

,

D

R

A

I

N

-

S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.4

0.8

1.2

1.6

2

-50

-25

0 25 50 75

100

125

150

V = -1.8V

I = -5A

GS

D

V = -2.5V

I = -10A

GS

D

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation with Temperature

R

,

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

(

)

DS(ON)

Ω

0

0.01

0.02

0.03

0.04

-50 -25 0 25 50 75 100 125 150

V = -2.5V

I = A

GS

D

-10

V = V

I = A

GS

D

-1.8

-5

DMP2021UFDF-13

DMP2021UFDF-13

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