TIC216D-S

TIC216 SERIES
SILICON TRIACS
1
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Sensitive Gate Triacs
6 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 5 mA (Quadrants 1 - 3)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 7C derate linearly to 110°C case temperature
at
the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or b
elow) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum ave
raging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC216D
TIC216M
TIC216S
TIC216N
V
DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) I
T(RMS)
6 A
Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3) I
TSM
60 A
Peak gate current I
GM
±1 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width 20
0 µs) P
GM
2.2 W
Average gate power dissipation a
t (or below) 85°C case temperature (see Note 4) P
G(AV)
0.9 W
Operating case temperature range T
C
-40 to +110 °C
Storage temperature range T
stg
-40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds T
L
230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0 T
C
= 11C ±2 mA
I
GT
Gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20 µs
t
p(g)
> 20 µs
t
p(g)
> 20 µs
t
p(g)
> 20 µs
5
-5
-5
10
mA
All voltages are with respect to Main Terminal 1.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
OBSOLETE
TIC216 SERIES
SILICON TRIACS
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t
p
= 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supp
lied by a generator with the following characteristics:
R
G
= 100 , t
p(g)
= 20 µs, t
r
= 15 ns, f = 1 kHz.
V
GT
Gate trigger
voltage
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20 µs
t
p(g)
> 20 µs
t
p(g)
> 20 µs
t
p(g)
> 20 µs
2.2
-2
.2
-2.2
3
V
V
T
On-state voltage I
T
= ±8.4 A I
G
= 50 mA (see Note 5) ±1.7 V
I
H
Holding current
V
supply
= +12 V
V
supply
= -12 V
I
G
= 0
I
G
= 0
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
30
-3
0
mA
I
L
Latching current
V
supply
= +12 V
V
supply
= -12 V
(see Note 6)
4
-2
mA
dv/dt
Critical rate of rise of
of
f-state voltage
V
DRM
= Rated V
DRM
I
G
= 0 T
C
= 11C ±20 V/µs
dv/dt
(c)
Critical rise of
commutation voltage
V
DRM
= Rated V
DRM
I
TRM
= ±8.4 A T
C
= 70°C ±2 ±5 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 2.5 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OBSOLETE

TIC216D-S

Mfr. #:
Manufacturer:
Bourns
Description:
Triacs 400V 6A TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
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