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IRGP35B60PD-EP

P1-P3P4-P6P7-P9P10-P10
IRGP35B60PD-EP
4 www.irf.com
Fig. 8 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= 125°C
Fig. 12 - Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3Ω; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 11 - Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 3.3Ω; V
GE
= 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
0 5 10 15 20
V
GE
(V)
0
100
200
300
400
500
600
700
800
I
C
E
(
A
)
T
J
= 25°C
T
J
= 125°C
T
J
= 125°C
T
J
= 25°C
0 5 10 15 20
V
GE
(V)
1
2
3
4
5
6
7
8
9
10
V
C
E
(
V
)
I
CE
= 11A
I
CE
= 22A
I
CE
= 35A
0 5 10 15 20
V
GE
(V)
1
2
3
4
5
6
7
8
9
10
V
C
E
(
V
)
I
CE
= 11A
I
CE
= 22A
I
CE
= 35A
0 5 10 15 20 25 30 35 40
I
C
(A)
0
100
200
300
400
500
600
700
800
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
0 10 20 30 40
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
1
10
100
0.8 1.2 1.6 2.0 2.4
FM
F
I nstantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
IRGP35B60PD-EP
www.irf.com 5
Fig. 14 - Typ. Switching Time vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 22A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 13 - Typ. Energy Loss vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 22A; V
GE
= 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 16- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 15- Typ. Output Capacitance
Stored Energy vs. V
CE
Fig. 17 - Typical Gate Charge
vs. V
GE
I
CE
= 22A
Fig. 18 - Normalized Typ. V
CE(on)
vs. Junction Temperature
I
C
= 22A, V
GE
= 15V
-50 0 50 100 150 200
T
J
(°C)
0.8
1.0
1.2
1.4
N
o
r
m
a
l
i
z
e
d
V
C
E
(
o
n
)
(
V
)
0 10 20 30 40 50
R
G
(
Ω
)
0
100
200
300
400
500
600
700
800
E
n
e
r
g
y
(
µ
J
)
E
ON
E
OFF
0 10 20 30 40 50
R
G
(
Ω
)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 20 40 60 80 100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 50 100 150 200
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
400V
0 100 200 300 400 500 600 700
V
CE
(V)
0
5
10
15
20
25
30
E
o
e
s
(
µ
J
)
IRGP35B60PD-EP
6 www.irf.com
Fig. 20 - Typical Recovery Current vs. di
f
/dt
Fig. 19 - Typical Reverse Recovery vs. di
f
/dt
Fig. 21 - Typical Stored Charge vs. di
f
/dt Fig. 22 - Typical di
(rec)M
/dt vs. di
f
/dt,
20
40
60
80
100
100 1000
f
di /dt - (A/µs)
t - (ns)
rr
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
100 1000
f
di /dt - (A/µs)
I - (A)
IRRM
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
800
100 1000
f
di /dt - (A/µs)
RR
Q - (nC)
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
100 1000
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
P1-P3P4-P6P7-P9P10-P10

IRGP35B60PD-EP

Mfr. #:
Buy IRGP35B60PD-EP
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V WARP2 150KHZ COPACK IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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