PACUSBVBD1/D2/D3
Rev. 2 | Page 4 of 9 | www.onsemi.com
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL
PARAMETER CONDITIONS MIN
TYP
MAX
UNITS
R1 Resistance of R1 Resistor
(PACUSBVB-D2Y6/Y6R)
T
A
= 25°C 12 15 18
Ω
R1 Resistance of R1 Resistor
(PACUSBVB-D3Y6/Y6R)
T
A
= 25°C 17.6 22 26.4
Ω
R1 Resistance of R1 Resistor
(PACUSBVB-D1Y6/Y6R)
T
A
= 25°C 26.4 33 39.6
Ω
R2 Resistance of R2 Resistor T
A
= 25°C 15
kΩ
TCR Temperature Coefficient of
Resistance
+1300 ppm/°
C
0 VDC; 30 mVAC; 1MHz; 25°C 37.6 47 56.4 pF C1 Capacitance of C1 Capacitor
2.5 VDC; 30 mVAC; 1MHz; 25°C 25.6 32 38.4 pF
TOL
CM
Matching Tolerance of C1
Capacitors
1MHz; 25°C +2 %
I
LEAK
Diode Leakage Current to GND Measured at 3.3 VDC, 25°C 1 100
nA
V
RB
Diode Reverse Bias Voltage
I
LOAD
= 10μA; T
A
= 25°C
5.5 V
V
SIG
Signal Voltage:
Positive Clamp
Negative Clamp
I
LOAD
= 10mA; T
A
= 25°C
I
LOAD
= 10mA; T
A
= 25°C
5.6
-0.4
6.8
-0.8
9.0
-1.5
V
V
V
ESD
In-system ESD Withstand Voltage
MIL-STD-883D, Method 3015
(HBM)
IEC 61000-4-2 Contact
Discharge
Pins 1, 3; Notes 1 and 2
Pins 4, 5; Note 1
Pins 4, 5; Note 1
±4
±20
±15
kV
kV
kV
MIL-STD-883D, Method 3015
+8kV; Note 3
12 V V
CL
Clamping voltage under ESD
discharge
MIL-STD-883D, Method 3015 -8kV;
Note 3
-7 V
Note 1: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.
Note 2: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards.
Thus, they do not require the high ESD protection levels provided for pins 4, 5, and 6.
Note 3: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if
ESD is applied to pin 6, then the clamping voltage is measured at pin 1).
