PTVA104501EHV1XWSA1

48:%),
(EXE7LIIX SJ 6IZ
8]TMGEP6*4IVJSVQERGIGSRX
15
25
35
45
55
65
15
25
35
45
55
65
28 30 32 34 36 38 40 42 44
P
IN
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 200 mA, T
CASE
= 25°C,
P.W = 3.354mS, Burts = 7µS On, 6µS Off,
L.T = 22.7% duty cycle
960 MHz
1030 Mhz
1090 MHz
1150 MHz
1215 MHz
a104501eh_g5
Output power
Efficiency
12
14
16
18
20
22
28 30 32 34 36 38 40 42 44
P
IN
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 200 mA, T
CASE
= 25°C
P.W = 3.354mS, Burts = 7µS On, 6µS Off,
L.T = 22.7% duty cycle
960 MHz
1030 MHz
1090 MHz
1150 MHz
1215 MHz
Gain
a104501eh_g6
50
55
60
65
70
16
17
18
19
20
900 1000 1100 1200 1300
Frequency (MHz)
Pulsed RF Performance
V
DD
= 50V, I
DQ
= 200mA, P
OUT
= 450W (peak),
P.W = 3.354mS, Burts = 7µS On, 6µS Off,
L.T = 22.7% duty cycle
a104501eh_g7
Gain
Efficiency
0.0
0.1
0.2
0.3
-25
-20
-15
-10
-5
900 1000 1100 1200 1300
Frequency (MHz)
Pulsed RF Performance
V
DD
= 50V, I
DQ
= 200mA, P
OUT
= 450W (peak),
P.W = 3.354mS, Burts = 7µS On, 6µS Off,
L.T = 22.7% duty cycle
Power Droop
IRL
a104501eh_g8
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48:%),
8]TMGEP6*4IVJSVQERGIGSRX
0
10
20
30
40
50
60
70
12
14
16
18
20
22
24
26
0 50 100 150 200 250 300
P
OUT
(W)
Power Sweep, Pulsed RF
V
DD
= 36 V, I
DQ
= 150 mA, T
CASE
= 25°C,
128 µs pulse width, 10% duty cycle
960 MHz
1030 MHz
1090 MHz
1150 MHz
1240 MHz
a104501eh_g9
Gain
Efficiency
0
10
20
30
40
50
60
70
12
14
16
18
20
22
24
26
0 50 100 150 200 250
P
OUT
(W)
CW Power Sweep
V
DD
= 36 V, I
DQ
= 150 mA, T
CASE
= 25 ºC
960 MHz
1030 MHz
1090 MHz
1150 MHz
1240 MHz
a104501eh_g10
Gain
Efficiency
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398
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398
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4
-2
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398
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398
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398
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4
-2
?H&QA
4
398
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4
398
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+
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    
    

PTVA104501EHV1XWSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors RFP-LDH1V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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