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SQJ504EP-T1_GE3

P1-P3P4-P6P7-P9P10-P10
SQJ504EP
www.vishay.com
Vishay Siliconix
S18-0003-Rev. A, 15-Jan-18
1
Document Number: 76029
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N- and P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
V
DS
(V) 40 -40
R
DS(on)
() at V
GS
= ± 10 V 0.0075 0.0170
R
DS(on)
() at V
GS
= ± 4.5 V 0.0110 0.0230
I
D
(A) 30 -30
Configuration N- and p-pair
Package PowerPAK SO-8L Dual
PowerPAK
®
SO-8L Dual
Top View
1
6.15 mm
5.13 mm
1
6.15
m
m
5
.13
m
m
Bottom View
2
G
1
3
S
2
4
G
2
1
S
1
D
2
D
1
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT
Drain-source voltage V
DS
40 -40
V
Gate-source voltage V
GS
± 20
Continuous drain current
T
C
= 25 °C
I
D
30
a
-30
a
A
T
C
= 125 °C 29.3 -19.5
Continuous source current (diode conduction)
a
I
S
30 -30
Pulsed drain current
b
I
DM
90 -84
Single pulse avalanche current
L = 0.1 mH
I
AS
25 -24
Single pulse avalanche Energy E
AS
31.2 28.8 mJ
Maximum power dissipation
b
T
C
= 25 °C
P
D
34 34
W
T
C
= 125 °C 11 11
Operating junction and storage temperature range T
J
, T
stg
-55 to +175
°C
Soldering recommendations (peak temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT
Junction-to-ambient PCB mount
c
R
thJA
85 85
°C/W
Junction-to-case (drain) R
thJC
4.3 4.3
SQJ504EP
www.vishay.com
Vishay Siliconix
S18-0003-Rev. A, 15-Jan-18
2
Document Number: 76029
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA N-Ch 40 - -
V
V
GS
= 0 V, I
D
= -250 μA P-Ch -40 - -
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA N-Ch 1.5 2 2.5
V
DS
= V
GS
, I
D
= -250 μA P-Ch -1.5 -2 -2.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch - - ± 100
nA
P-Ch - - ± 100
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 40 V N-Ch - - 1
μA
V
GS
= 0 V V
DS
= -40 V P-Ch - - -1
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C N-Ch - - 50
V
GS
= 0 V V
DS
= -40 V, T
J
= 125 °C P-Ch - - -50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C N-Ch - - 150
V
GS
= 0 V V
DS
= -40 V, T
J
= 175 °C P-Ch - - -150
On-state drain current
a
I
D(on)
V
GS
= 10 V V
DS
5 V N-Ch 10 - -
A
V
GS
= -10 V V
DS
5 V P-Ch -10 - -
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 8 A N-Ch - 0.0061 0.0075
V
GS
= -10 V I
D
= -8 A P-Ch - 0.0138 0.0170
V
GS
= 10 V I
D
= 8 A, T
J
= 125 °C N-Ch - - 0.0110
V
GS
= -10 V I
D
= -8 A, T
J
= 125 °C P-Ch - - 0.0254
V
GS
= 10 V I
D
= 8 A, T
J
= 175 °C N-Ch - - 0.0130
V
GS
= -10 V I
D
= -8 A, T
J
= 175 °C P-Ch - - 0.0304
V
GS
= 4.5 V I
D
= 5 A N-Ch - 0.0088 0.0110
V
GS
= -4.5 V I
D
= -5 A P-Ch - 0.0186 0.0230
Forward transconductance
b
g
fs
V
DS
= 15 V, I
D
= 8 A N-Ch - 35 -
S
V
DS
= -15 V, I
D
= -8 A P-Ch - 30 -
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch - 1355 1900
pF
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz P-Ch - 3340 4600
Output capacitance C
oss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch - 875 1400
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz P-Ch - 230 320
Reverse transfer capacitance C
rss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch - 35 50
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz P-Ch - 216 300
Total gate charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 5 A N-Ch - 18 30
nC
V
GS
= -10 V V
DS
= -20 V, I
D
= -5 A P-Ch - 56 85
Gate-source charge
c
Q
gs
V
GS
= 10 V V
DS
= 20 V, I
D
= 5 A N-Ch - 3.5 -
V
GS
= -10 V V
DS
= -20 V, I
D
= -5 A P-Ch - 8.5 -
Gate-drain charge
c
Q
gd
V
GS
= 10 V V
DS
= 20 V, I
D
= 5 A N-Ch - 2.6 -
V
GS
= -10 V V
DS
= -20 V, I
D
= -5 A P-Ch - 9.9 -
Gate resistance R
g
f = 1 MHz
N-Ch 0.3 0.72 1.2
P-Ch 1.15 2.37 3.6
SQJ504EP
www.vishay.com
Vishay Siliconix
S18-0003-Rev. A, 15-Jan-18
3
Document Number: 76029
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Turn-on delay time
c
t
d(on)
V
DD
= 20 V, R
L
= 4 ,
I
D
5 A, V
GEN
= 10 V, R
g
= 1
N-Ch - 11 20
ns
V
DD
= -20 V, R
L
= 4 ,
I
D
-5 A, V
GEN
= -10 V, R
g
= 1
P-Ch - 15 25
Rise time
c
t
r
V
DD
= 20 V, R
L
= 4 ,
I
D
5 A, V
GEN
= 10 V, R
g
= 1
N-Ch - 4 10
V
DD
= -20 V, R
L
= 4 ,
I
D
-5 A, V
GEN
= -10 V, R
g
= 1
P-Ch - 6 10
Turn-off delay time
c
t
d(off)
V
DD
= 20 V, R
L
= 4 ,
I
D
5 A, V
GEN
= 10 V, R
g
= 1
N-Ch - 21 35
V
DD
= -20 V, R
L
= 4 ,
I
D
-5 A, V
GEN
= -10 V, R
g
= 1
P-Ch - 45 70
Fall time
c
t
f
V
DD
= 20 V, R
L
= 4 ,
I
D
5 A, V
GEN
= 10 V, R
g
= 1
N-Ch - 5 10
V
DD
= -20 V, R
L
= 4 ,
I
D
-5 A, V
GEN
= -10 V, R
g
= 1
P-Ch - 7 12
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
N-Ch - - 90
A
P-Ch - - -84
Forward voltage V
SD
I
S
= 8 A, V
GS
= 0 V N-Ch - 0.803 1.2
V
I
S
= -8 A, V
GS
= 0 V P-Ch - -0.790 -1.2
Body diode reverse recovery time t
rr
I
F
= 5 A, di/dt = 100 A/μs N-Ch - 48 100
ns
I
F
= -5 A, di/dt = 100 A/μs P-Ch - 26 55
Body diode reverse recovery charge Q
rr
I
F
= 5 A, di/dt = 100 A/μs N-Ch - 54 110
nC
I
F
= -5 A, di/dt = 100 A/μs P-Ch - 22 45
Reverse recovery fall time t
a
I
F
= 5 A, di/dt = 100 A/μs N-Ch - 25 -
ns
I
F
= -5 A, di/dt = 100 A/μs P-Ch - 15 -
Reverse recovery rise time t
b
I
F
= 5 A, di/dt = 100 A/μs N-Ch - 23 -
I
F
= -5 A, di/dt = 100 A/μs P-Ch - 11 -
Body diode peak reverse recovery
current
I
RM(REC)
I
F
= 5 A, di/dt = 100 A/μs N-Ch - -2.1 -
A
I
F
= -5 A, di/dt = 100 A/μs P-Ch - -1.7 -
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
P1-P3P4-P6P7-P9P10-P10

SQJ504EP-T1_GE3

Mfr. #:
Buy SQJ504EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40/-40V Vds; SO-8L +/-20V Vgs
Lifecycle:
New from this manufacturer.
Delivery:
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