SMD Bridge Rectifiers
RoHS Device
Page 1
REV:A
Features
- Low power loss, High efficiency.
- High current capability.
Mechanical data
Z4GP206-HF Thru. Z4GP210-HF
QW-JBR04
Comchip Technology CO., LTD.
- Lead less chip form, no lead damage.
Halogen free
- Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 .
Company reserves the right to improve product design , functions and reliability without notice.
Circuit Diagram
Reverse Voltage: 600 to 1000 Volts
Forward Current: 2.0 A
RoHS Device
(Glass passivated rectifier chip) inside.
- Intermal structure with GPRC
- Polarity: Laser marking symbols
- Weight: 0.11 grams (approx).
Parameter
Symbol
Unit
Z4GP206-HF
Repetitive Peak Reverse Voltage
Average Forward Current
Peak Forward Surge Current, 8.3mS single
half sine-wave, superimposed on rated load
(JEDEC Method)
Forward Voltage
Repetitive peak reverse current
VR=Max. VRRM, Ta=25°C
Current squared time
Notes: Thermal resistance, junction to ambient,measured on PC board with 5.0*5.0mm(0.03mm thick) land areas.
VRRM
I(AV)
IFSM
VF
IRRM
600 800 1000
V
2.0
50
0.08
5
10.4
A
A
V
uA
Abolute Maximum Rating (at TA=25°C unless otherwise noted)
Z4GP208-HF Z4GP210-HF
Parameter
Symbol
Unit
Min.
Typ.
Max.
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
-55 to +175
-55 to +175
°C
°C
Electrical Characteristics (at TA=25°C unless otherwise noted)
IF = 2.0A 0.95 1.00
I t
2
t<8.3ms, Ta = 25°C
Junction capacitance
25
pF
VR=4V, f=1.0MHz
CJ
Thermal resistance
95
°C/W
Junction to ambient (Note)
15
°C/W
Junction to lead (Note)
Rth(JL)
Rth(JA)
Conditions
A S
2
14
23
+-
~~
Dimensions in inches and (millimeter)
ABS(Z4)
0.053(1.35)
0.041(1.05)
0.213(5.40)
0.205(5.20)
0.232(5.90)
0.224(5.70)
R0.25±0.05
0.037(0.95)
0.033(0.85)
0.047(1.20)
0.039(1.00)
~
~
+
-
0.132(3.35)
0.128(3.25)
- Case: Packed with FRP substrate and
epoxy underfilled.
- Terminals: Pure Tin plated (Lead-Free),
solderable per MIL-STD-750,
method 2026.
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