RT8012A
5
DS8012A-06 September 2012 www.richtek.com
©
Copyright 2012 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.
Absolute Maximum Ratings (Note 1)
z Supply Input Voltage, VDD, PVDD1, PVDD2 --------------------------------------------------------------- −0.3V to 6V
z LX1, LX2 Pin Voltage --------------------------------------------------------------------------------------------- −0.3V to (V
DD
+ 0.3V)
< 20ns ---------------------------------------------------------------------------------------------------------------- −5V to 8V
z Other I/O Pin Voltages ------------------------------------------------------------------------------------------- −0.3V to (V
DD
+ 0.3V)
z Power Dissipation, P
D
@ T
A
= 25°C
WQFN-16L 4x4 ---------------------------------------------------------------------------------------------------- 1.852W
z Package Thermal Resistance (Note 2)
WQFN-16L 4x4, θ
JA
----------------------------------------------------------------------------------------------- 54°C/W
WQFN-16L 4x4, θ
JC
---------------------------------------------------------------------------------------------- 7°C/W
z Junction Temperature --------------------------------------------------------------------------------------------- 150°C
z Lead Temperature (Soldering, 10 sec.) ----------------------------------------------------------------------- 260°C
z Storage Temperature Range ------------------------------------------------------------------------------------ −65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Model) -------------------------------------------------------------------------------------- 2kV
Electrical Characteristics
(PVDD1 = PVDD2 = V
DD
= 3.6V, T
A
= 25°C, unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Input Voltage Range V
DD
2.6 -- 5.5 V
Feedback Reference Voltage V
REF
0.784 0.8 0.816 V
Active, not Switching,
V
FB1
, V
FB1
= 0.75V
500 830 1100 μA
DC Bias Current
(PVDD1, PVDD2, VDD total)
EN1, EN2 = 0 -- -- 2 μA
V
DD
Rising 2.3 2.43 2.55 V
Under Voltage Lockout Threshold
V
DD
Hysteresis -- 150 -- mV
FB Threshold for PGOOD Transition 0.68 0.72 0.76 V
PGOOD Pull-Down Resistance -- -- 100 Ω
Switching Frequency Switching Frequency 1 1.2 1.4 MHz
EN1 Input High 1.4 -- -- V
EN1 Input Low -- -- 0.4 V
EN2 Rising 0.85 1 1.15 V
EN2 Threshold
EN2 Hysteresis -- 200 -- mV
EN2 Delay C5
= 0.1μF 70 100 130 ms
EN2 Pull-up current (Note 5) -- 1 -- μA
Recommended Operating Conditions (Note 4)
z Supply Input Voltage, VDD, PVDD1, PVDD2 --------------------------------------------------------------- 2.6V to 5.5V
z Junction Temperature Range ------------------------------------------------------------------------------------
−40°C to 125°C
z Ambient Temperature Range ------------------------------------------------------------------------------------
−40°C to 85°C
