Philips Semiconductors
PHX45NQ11T
N-channel TrenchMOS™ standard level FET
Product data Rev. 01 — 17 May 2004 8 of 12
9397 750 13181
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
7. Isolation characteristics
T
j
=25°C and 150 °C; V
GS
=0V I
D
= 45 A; V
DD
= 20 V and 80 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ao85
0
10
20
30
40
50
0 0.3 0.6 0.9 1.2
V
SD
(V)
I
D
(A)
T
j
= 25
°
C
175
°
C
V
GS
= 0 V
03ao87
0
5
10
15
0 20406080
Q
G
(nC)
V
GS
(V)
I
D
= 45 A
T
j
= 25
°
C
V
DD
= 20 V
80 V
Table 6: Isolation characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
V
isol
RMS isolation voltage from all three
terminals to external heatsink.
f = 50-60 Hz; sinusoidal waveform;
RH ≤ 65%; clean and dust-free.
- - 2500 V
C
isol
Capacitance from pin 2 (drain) to
external heatsink.
f=1MHz -10-pF