OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MC33342DR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 7
1 Publication Order Number:
MC33340/D
MC33340, MC33342
Battery Fast Charge
Controllers
The MC33340 and MC33342 are monolithic control IC’s that are
specifically designed as fast charge controllers for Nickel Cadmium
(NiCd) and Nickel Metal Hydride (NiMH) batteries. These devices
feature negative slope voltage detection as the primary means for fast
charge termination. Accurate detection is ensured by an output that
momentarily interrupts the charge current for precise voltage
sampling. An additional secondary backup termination method can
be selected that consists of either a programmable time or temperature
limit. Protective features include battery over and undervoltage
detection, latched over temperature detection, and power supply input
undervoltage lockout with hysteresis. Fast charge holdoff time is the
only difference between the MC33340 and the MC33342. The
MC33340 has a typical holdoff time of 177 seconds and the
MC33342 has a typical holdoff time of 708 seconds.
• Negative Slope Voltage Detection with 4.0 mV Sensitivity
• Accurate Zero Current Battery Voltage Sensing
• High Noise Immunity with Synchronous VFC/Logic
• Programmable 1 to 4 Hour Fast Charge Time Limit
• Programmable Over/Undertemperature Detection
• Battery Over and Undervoltage Fast Charge Protection
• Power Supply Input Undervoltage Lockout with Hysteresis
• Operating Voltage Range of 3.25 V to 18 V
• 177 seconds Fast Change Holdoff Time (MC33340)
• 708 seconds Fast Change Holdoff Time (MC33342)
• Pb−Free Packages are Available
Figure 1. Simplified Block Diagram
This device contains 2,512 active transistors.
DC
Input
V
CC
Undervoltage
Lockout
Over
Temp
Latch
Battery
Detect
Temp
Detect
Time/
Temp Select
V
sen
V
sen
Gate
Fast/
Trickle
Voltage to
Frequency
Converter
−DV Detect
Counter
Timer
Battery
Pack
Internal Bias
V
CC
V
CC
GND
Q
R
S
t1/T
ref
High
t2/T
sen
t3/T
ref
Low
7
6
5
8
4
3
2
1
High
Low
V
sen
Gate
F/T
Over
Under
t1
t2
t3
t/T
Ck F/V R
Regulator
PDIP−8
P SUFFIX
CASE 626
1
8
SOIC−8
NB SUFFIX
CASE 751
1
8
MARKING
DIAGRAMS
x = 0 or 2
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
1
8
MC3334xP
AWL
YYWW
(Top View)
PIN CONNECTIONS
V
CC
8V
sen
Input
V
sen
Gate Output
Fast/Trickle Output
Gnd
t1/T
ref
High
t2/T
sen
t3/T
ref
Low
7
6
5
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
3334x
ALYWX
G
1
8
MC33340, MC33342
http://onsemi.com
2
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Power Supply Voltage (Pin 8) V
CC
18 V
Input Voltage Range
V
Time/Temperature Select (Pins 5, 6, 7) V
IR(t/T)
−1.0 to V
CC
Battery Sense, (Note 2) (Pin 1) V
IR(sen)
−1.0 to V
CC
+ 0.6 or −1.0 to 10
V
sen
Gate Output (Pin 2)
Voltage
Current
V
O(gate)
I
O(gate)
20
50
V
mA
Fast/Trickle Output (Pin 3)
Voltage
Current
V
O(F/T)
I
O(F/T)
20
50
V
mA
Thermal Resistance, Junction−to−Air
R
q
JA
°C/W
P Suffix, DIP Plastic Package, Case 626 100
D Suffix, SO−8 Plastic Package, Case 751 178
Operating Junction Temperature T
J
+150 °C
Operating Ambient Temperature (Note 3) T
A
−25 to +85 °C
Storage Temperature T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015 Machine Model Method 400 V
MC33340, MC33342
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (V
CC
= 6.0 V, for typical values T
A
= 25°C, for min/max values T
A
is the operating
ambient temperature range that applies (Note 3), unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
BATTERY SENSE INPUT (Pin 1)
Input Sensitivity for −DV Detection −DV
th
− −4.0 − mV
Overvoltage Threshold V
th(OV)
1.9 2.0 2.1 V
Undervoltage Threshold V
th(UV)
0.95 1.0 1.05 mV
Input Bias Current I
IB
− 10 − nA
Input Resistance R
in
− 6.0 −
MW
TIME/TEMPERATURE INPUTS (Pins 5, 6, 7)
Programing Inputs (V
in
= 1.5 V)
Input Current
Input Current Matching
I
in
DI
in
−24
−
−30
1.0
−36
2.0
mA
%
Input Offset Voltage, Over and Under Temperature Comparators V
IO
− 5.0 − mV
Under Temperature Comparator Hysteresis (Pin 5) V
H(T)
− 44 − mV
Temperature Select Threshold V
th(t/T)
− V
CC
−0.7 − V
INTERNAL TIMING
Internal Clock Oscillator Frequency f
OSC
− 760 − kHz
V
sen
Gate Output (Pin 2)
Gate Time
Gate Repetition Rate
t
gate
−
−
33
1.38
−
−
ms
s
Fast Charge Holdoff from −DV Detection
MC33340
MC33342
t
hold
−
−
177
708
−
−
s
V
sen
GATE OUTPUT (Pin 2)
Off−State Leakage Current (V
O
= 20 V) I
off
− 10 − nA
Low State Saturation Voltage (I
sink
= 10 mA) V
OL
− 1.2 − V
FAST/TRICKLE OUTPUT (Pin 3)
Off−State Leakage Current (V
O
= 20 V) I
off
− 10 − nA
Low State Saturation Voltage (I
sink
= 10 mA) V
OL
− 1.0 − V
UNDERVOLTAGE LOCKOUT (Pin 8)
Startup Threshold (V
CC
Increasing, T
A
= 25°C) V
th(on)
− 3.0 3.25 V
Turn−Off Threshold (V
CC
Decreasing, T
A
= 25°C) V
th(off)
2.75 2.85 − V
TOTAL DEVICE (Pin 8)
Power Supply Current (Pins 5, 6, 7 Open)
Startup (V
CC
= 2.9 V)
Operating (V
CC
= 6.0 V)
I
CC
−
−
0.65
0.61
2.0
2.0
mA
2. Whichever voltage is lower.
3. Tested junction temperature range for the MC33340/342: T
low
= −25°CT
high
= +85°C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MC33342DR2G

Mfr. #:
Buy MC33342DR2G
Manufacturer:
ON Semiconductor
Description:
IC CTRLR BATTERY FAST CHRG 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet