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STTH3003CW

P1-P3P4-P5
STTH3003CW
October 1999 - Ed: 5A
HIGH FREQUENCY SECONDARY RECTIFIER
®
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC to DC converters.
Packaged in TO-247 this device is intended for
secondary rectification.
DESCRIPTION
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
300 V
I
F(RMS)
RMS forward current
30 A
I
F(AV)
Average forward current Tc = 135°C
δ = 0.5
Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal
140 A
I
RSM
Non repetitive peak reverse current tp = 20 µs square
7A
T
stg
Storage temperature range
-65 +175 °C
Tj
Maximum operating junction temperature
+175 °C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 15 A
V
RRM
300 V
Tj (max) 175 °C
V
F
(max) 1 V
trr (max) 40 ns
MAJOR PRODUCT CHARACTERISTICS
A1
K
A2
TO-247
1/5
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage
current
V
R
= 300 V Tj = 25°C
40 µA
Tj = 125°C
40 400
V
F
**
Forward voltage drop I
F
= 15 A Tj = 25°C
1.25 V
Tj = 125°C
0.85 1
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I
F(AV)
+ 0.017 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode
2.0 °C/W
Total
1.05
R
th (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol Tests conditions Min. Typ. Max. Unit
trr
I
F
= 0.5 A Irr = 0.25 A I
R
= 1A Tj = 25°C
30 ns
I
F
= 1 A dI
F
/dt = - 50 A/µs V
R
= 30V
40
tfr
I
F
= 15 A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x VF max.
Tj = 25°C
300 ns
V
FP
3.5 V
S
factor
Vcc = 200 V I
F
= 15 A
dI
F
/dt = 200A/µs
Tj = 125°C
0.3 -
I
RM
8.5 A
RECOVERY CHARACTERISTICS
STTH3003CW
2/5
02468101214161820
0
2
4
6
8
10
12
14
16
18
20
IF(av) (A)
P1(W)
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1: Conduction losses versus average current
(per diode).
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
1
10
100
200
VFM(V)
IFM(A)
Tj=125°C
Tj=25°C
Tj=75°C
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
T
δ
=tp/T
tp
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0 50 100 150 200 250 300 350 400 450 500
0
20
40
60
80
100
trr(ns)
VR=200V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence, per diode).
0 50 100 150 200 250 300 350 400 450 500
0
2
4
6
8
10
12
14
16
dIF/dt(A/µs)
IRM(A)
VR=200V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 4: Peak reverse recovery current versus
dI
F
/dt (90% confidence, per diode).
0 50 100 150 200 250 300 350 400 450 500
0.00
0.10
0.20
0.30
0.40
0.50
0.60
S factor
VR=200V
Tj=125°C
dIF/dt(A/µs)
Fig. 6: Softness factor versus dI
F
/dt (typical
values, per diode).
STTH3003CW
3/5
P1-P3P4-P5

STTH3003CW

Mfr. #:
Buy STTH3003CW
Manufacturer:
STMicroelectronics
Description:
Rectifiers 2x15 Amp 300 Volt
Lifecycle:
New from this manufacturer.
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