1N4003GPEHE3/53

1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP
www.vishay.com
Vishay General Semiconductor
Revision: 07-Nov-16
1
Document Number: 88504
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Junction Plastic Rectifier
FEATURES
Superectifier structure for high reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current, typical I
R
less than 0.1 μA
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer
applications.
MECHANICAL DATA
Case: DO-204AL (DO-41), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Notes
(1)
JEDEC
®
registered values
(2)
For device using on bridge rectifier application
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I
FSM
(8.3 ms sine-wave) 30 A
I
FSM
(square wave t
p
= 1 ms) 45 A
I
R
5.0 μA
V
F
1.1 V
T
J
max. 175 °C
Package DO-204AL (DO-41)
Diode variations Single die
DO-204AL (DO-41)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP
UNIT
Maximum repetitive peak
reverse voltage
V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS voltage V
RMS
(1)
35 70 140 280 420 560 700 V
Maximum DC blocking voltage V
DC
(1)
50 100 200 400 600 800 1000 V
Maximum average forward rectified
current 0.375" (9.5 mm) lead length
at T
A
= 75 °C
I
F(AV)
(1)
1.0 A
Peak forward surge current 8.3 ms
single half sine-wave
superimposed on rated load
I
FSM
(1)
30 A
Non-repetitive peak
forward surge current
square waveform
T
A
= 25 °C (fig. 3)
t
p
= 1 ms
I
FSM
(1)
45
A
t
p
= 2 ms 35
t
p
= 5 ms 30
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length T
A
= 75 °C
I
R(AV)
(1)
30 μA
Rating for fusing (t < 8.3 ms) I
2
t
(2)
3.7 A
2
s
Operating junction and
storage temperature range
T
J
, T
STG
(1)
-65 to +175 °C
1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP
www.vishay.com
Vishay General Semiconductor
Revision: 07-Nov-16
2
Document Number: 88504
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(3)
JEDEC
®
registered values
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Maximum
instantaneous
forward voltage
1.0 A V
F
1.1 V
Maximum DC
reverse current
at rated DC
blocking voltage
T
A
= 25 °C
I
R
(1)
5.0
μA
T
A
= 125 °C 50
Typical reverse
recovery time
I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
2.0 μs
Typical junction
capacitance
4.0 V,
1 MHz
C
J
8.0 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT
Typical thermal resistance
R
JA
(1)
55
°C/
W
R
JL
(1)
25
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N4004GP-E3/54 0.335 54 5500 13" diameter paper tape and reel
1N4004GP-E3/73 0.335 73 3000 Ammo pack packaging
0
0
25
50
75 100 125 150 175
0.2
0.4
0.6
0.8
1.0
Ambient Temperature (°C)
Average Forward Rectied Current (A)
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
5
101 100
10
15
20
25
30
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP
www.vishay.com
Vishay General Semiconductor
Revision: 07-Nov-16
3
Document Number: 88504
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
50 75 100
50
25 125
30
25
20
15
45
40
35
10
Ambient Temperature (°C)
Square Waveform
t
p
t
p
= 1 ms
t
p
= 5 ms
t
p
= 2 ms
Peak Forward Surge Current (A)
0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0
0.01
0.1
1
10
60 80 10020 40
T
J
= 25 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
0.1 101 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 101 100
0.1
10
100
1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)

1N4003GPEHE3/53

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200V 1.0A Glass Passivated TrimLeads
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union