UPS120/TR7 Datasheet UPS120E3/TR7, UPS120/TR7, UPS120e3/TR13 | P1-P3

Schottky Barrier Rectifier

www.Microsemi.com

1/4

June 2008 Rev E

UPS120e3

Main product characteristics

Features and benefits

• Low forward voltage drop

• Low profile package height

• Efficient heat path with integral locking bottom metal tab

• Low thermal resistance DO-216AA package

Description and applications

Single schottky rectifier assembled in Powermite 1

®

package which features a full metallic bottom that

eliminates possibility of solder flux entrapment during assembly. The package also incorporates a unique

locking tab which acts as an efficient heat path from die to mounting plane for external heat sinking with

very low thermal resistance junction to case (bottom).

This product is suitable for use in switching and regulating power supplies and also charge pump

circuits.

Absolute maximum ratings

(1)

Symbol Parameter Value Unit

V

RRM

V

RWM

V

R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

20 V

V

R(RMS)

RMS Reverse Voltage 14 V

I

O

Average rectified forward output current

(T

C

= 135ºC)

1.0 A

I

FRM

Peak repetitive forward current

(100kHz square wave, T

C

= 135ºC)

2.0 A

I

FSM

Non repetitive peak forward surge current

(8.3ms single half sine wave)

50 A

dV/dt Voltage rate of change (at max V

R

) 10000 V/µs

T

STG

Storage temperature -55 to +150 ºC

T

J

Junction temperature -55 to +125 ºC

(1)

All ratings at 25ºC unless specified otherwise

I

O

1A

V

RRM

20V

T

j(MAX)

125ºC

V

F(MAX)

0.415V

Powermite 1

(DO-216AA)

Schottky Barrier Rectifier

www.Microsemi.com

2/4

June 2008 Rev E

UPS120e3

Characteristics

Static Electrical Characteristics

Symbol Parameter Test Conditions Typ max Units

I

F

= 0.1 A 0.34

I

F

= 1.0 A 0.45

T

J

= 25ºC

I

F

= 3.0 A 0.65

I

F

= 0.1 A 0.25

I

F

= 1.0 A 0.415

V

F

(2)

Maximum forward voltage

T

J

= 85ºC

I

F

= 3.0 A 0.67

V

R

= 20V 0.40

T

J

= 25ºC

V

R

= 10V 0.10

V

R

= 20V 25

I

R

(2)

Maximum instantaneous

reverse current

T

J

= 85ºC

V

R

= 10V 18

mA

C

T

Junction capacitance V

R

= 5V, f = 1MHz 80 pF

(2)

Measured with a test pulse of 380µs to minimize self-heating effect

Thermal Characteristics

Symbol Parameter Value Unit

R

ΘJC

Junction to case (bottom) 15 ºC/W

R

ΘJA

Junction to ambient

(3)

240 ºC/W

(3)

Mounted on FR-4 PC board using 1oz copper with recommended minimum foot print

Reverse power dissipation and the possibility of thermal runaway

must be considered when operating this device under any

reverse voltage conditions. Calculations of T

J

therefore must

include forward and reverse power effects. The allowable

operating T

J

may be calculated from the equation:

T

J

= T

J max

= r(t)(Pf+Pr) where

r(t) = thermal impedance under given conditions.

Pf = forward power dissipation, and

Pr = reverse power dissipation

This graph displays the de-rated allowable T

J

due to reverse bias

under DC conditions only and is calculated as T

J

= T

J max

-r(t) Pr,

Where r(t)=Rthja. For other power applications further

calculations must be performed.

Schottky Barrier Rectifier

www.Microsemi.com

3/4

June 2008 Rev E

UPS120e3

Thermal Impedance Junction to Case (bottom)

Thermal Impedance Junction to Ambient

Mechanical Characteristics

Physical dimensions

Dimensions

Millimeters Inches

Ref.

Min. Max. Min. Max.

A

0.73 0.99 0.029 0.039

B

0.40 0.66 0.016 0.026

C

1.77 2.03 0.070 0.080

D

2.21 2.46 0.087 0.097

E

0.50 0.76 0.020 0.030

F

1.29 1.54 0.051 0.061

G

0.53 0.78 0.021 0.031

H

0.10 0.20 0.004 0.008

I

1.77 2.03 0.070 0.080

J

0.89 1.14 0.035 0.045

UPS120/TR7

UPS120/TR7

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