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STGB7NB60KDT4

P1-P3P4-P6P7-P9P10-P12
1/12May 2004
STGP7NB60KD - STGB7NB60KD
STGP7NB60KDFP
N-CHANNEL 7A - 600V - TO-220/TO-220FP/D
2
PAK
SHORT CIRCUIT RATED PowerMESH™ IGBT
■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
cesat
)
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
■ CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
™
IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ORDER CODES
TYPE V
CES
V
CE(sat)
I
C
STGP7NB60KD
STGP7NB60KDFP
STGB7NB60KD
600 V
600 V
600 V
<2.8 V
<2.8 V
<2.8V
7A
7A
7A
PART NUMBER MARKING PACKAGE PACKAGING
STGP7NB60KD GP7NB60KD TO-220 TUBE
STGB7NB60KDT4 GB7NB60KD
D
2
PAK
TAPE & REEL
STGP7NB60KDFP GP7NB60KDFP TO-220FP TUBE
TO-220
1
2
3
1
2
3
TO-220FP
1
3
D²PAK
INTERNAL SCHEMATIC DIAGRAM
STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD
2/12
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
Symbol Parameter Value Unit
STGP7NB60KD
STGB7NB60KD
STGP7NB60KDFP
V
CES
Collector-Emitter Voltage (V
GS
=0)
600 V
V
ECR
Emitter-Collector Voltage 20 V
V
GE
Gate-Emitter Voltage ±20 V
I
C
Collector Current (continuous) at T
C
=25°C
14 A
I
C
Collector Current (continuous) at T
C
=100°C
7A
I
CM
( )
Collector Current (pulsed) 56 A
P
TOT
Total Dissipation at T
C
=25°C
80 25 W
Derating Factor 0.64 0.20 W/°C
V
ISO
Insulation Withstand Voltage A.C.(t= 1 sec; Tc= 25°C) -- 2500 V
T
stg
Storage Temperature –55 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
TO-220
D
2
PAK
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 250 µA, V
GE
= 0 600 V
I
CES
Collector cut-off
(V
GE
=0)
V
CE
= Max Rating, T
C
=25°C50µA
V
CE
= Max Rating, T
C
=125°C 500 µA
I
GES
Gate-Emitter Leakage
Current (V
CE
=0)
V
GE
= ±20V, V
CE
= 0 ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold Voltage
V
CE
=V
GE
,I
C
= 250µA
57V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
=7A
2.3 2.8 V
V
GE
= 15V, I
C
= 7 A, Tj= 125°C
1.9 V
3/12
STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
(**) Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
Forward Transconductance
V
CE
=15V
,
I
C
=7 A
3.7 S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
=25V,f=1MHz,V
GE
= 0 495
77
13
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
=7A,
V
GE
=15V
32.7
5.9
18.3
45
nC
nC
nC
tscw Short Circuit Withstand Time V
ce
=0.5V
BR(CES)
,V
GE
=15V
Tj= 125°C,R
G
=10Ω
10 µs
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
CC
=480V,I
C
=7A
R
G
=10Ω,V
GE
=15V
15 ns
t
r
Rise Time 6 ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
=480V,I
C
=7A,R
G
=10Ω
V
GE
= 15 V,Tj = 125°C
980
95
A/µs
µJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
Cross-over Time
V
cc
=480V,I
C
=7A,
R
GE
=10Ω ,V
GE
=15V
105 ns
t
r
(V
off
)
Off Voltage Rise Time 30 ns
t
d
(
off
)
Delay Time 50 ns
t
f
Fall Time 100 ns
E
off
(**)
Turn-off Switching Loss 140
µJ
E
ts
Total Switching Loss 200
µJ
t
c
Cross-over Time
V
cc
=480V,I
C
=7A,
R
GE
=10Ω ,V
GE
=15V
Tj = 125 °C
227 ns
t
r
(V
off
)
Off Voltage Rise Time 68 ns
t
d
(
off
)
Delay Time 52 ns
t
f
Fall Time 150 ns
E
off
(**)
Turn-off Switching Loss 300
µJ
E
ts
Total Switching Loss 395
µJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
Forward Current
Forward Current pulsed
7
56
A
A
V
f
Forward On-Voltage I
f
=3.5A
I
f
=3.5A,Tj=125°C
1.4
1.2
1.9
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
=7A,V
R
=35V,
Tj =125°C, di/dt = 100 A/µs
50
70
2.7
ns
nC
A
P1-P3P4-P6P7-P9P10-P12

STGB7NB60KDT4

Mfr. #:
Buy STGB7NB60KDT4
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-Ch 600 Volt 7 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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