MCD312-18io1 Datasheet MCC312-16io1, MCC312-18io1, MCD312-16io1 | P1-P3

MCD312-12io1

Phase leg

Thyristor \ Diode Module

3 1 2

5 4

Part number

MCD312-12io1

Backside: isolated

TAV

V V1.06

RRM

320

1200

Features / Advantages: Applications: Package:

● International standard package

● Direct copper bonded Al2O3-ceramic

with copper base plate

● Planar passivated chip

● Isolation voltage 3600 V~

● Keyed gate/cathode twin pins

● Motor control, softstarter

● Power converter

● Heat and temperature control for

industrial furnaces and chemical

processes

● Lighting control

● Solid state switches

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~

3600

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and

the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The

information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns

the specific application of your product, please contact your local sales office.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.

Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

Terms Conditions of usage:

IXYS reserves the right to change limits, conditions and dimensions.

20170116eData according to IEC 60747and per semiconductor unless otherwise specified

MCD312-12io1

V = V

kA²s

Symbol

Definition

Ratings

typ.

max.

1.12

0.12 K/W

min.

320

1T = 25°C

T = °C

mA40V = V

T = 25°C

I = A

T = °C

tot

960 WT = 25°C

300

1200

forward voltage drop

total power dissipation

Conditions

Unit

1.32

T = 25°C

140

V0.80T = °C

140

0.68

mΩ

V1.06T = °C

I = A

300

1.29

I = A600

threshold voltage

slope resistance

for power loss calculation only

125

V1200T = 25°C

A520

Wt = 30 µs 120

max. gate power dissipation

T = °C

140

Wt = 60

GAV

W20

average gate power dissipation

438

junction capacitance

V = V400 T = 25°Cf = 1 MHz

TSM

t = 10 ms; (50 Hz), sine T = 45°C

max. forward surge current

T = °C

140

I²t

T = 45°C

value for fusing

T = °C140

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

thJC

thermal resistance junction to case

T = °C

140

9.60

10.4

332.9

323.3

8.16

8.82

460.8

447.4

1200

500 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

(di/dt)

A/µs

100repetitive, I =T

= 140 °C; f = 50 Hz

critical rate of rise of current

gate trigger voltage

V = 6 V T = °C25

(dv/dt)

T = 140°C

critical rate of rise of voltage

A/µs500

V/µs

t = µs;

I A; V = ⅔ V

R =

∞; method 1 (linear voltage rise)

960 A

= 1

di /dt A/µs;

DRM

V =

⅔ V

DRM

1000

2 V

T = °C-40

gate trigger current

V = 6 V T = °C25

150 mA

T = °C-40

3 V

220 mA

gate non-trigger voltage

T = °C

0.25 V

gate non-trigger current

10 mA

V = ⅔ V

D DRM

140

latching current

T = °C

200 mA

25t µs

= 30

I A;

= 0.45 di /dt A/µs

= 0.45

holding current

T = °C

150 mA

25V = 6 V

R = ∞

gate controlled delay time

T = °C

2 µs

I A;

= 1 di /dt A/µs

= 1

V = ½ V

D DRM

turn-off time

T = °C

200 µs

di/dt = A/µs10 dv/dt = V/µs50

V =

100 V; I A;

= 300 V =

⅔ V

DRM

µs

= 200

non-repet., I = 320 A

125

thCH

0.040

thermal resistance case to heatsink

K/W

Rectifier

1300

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

R/D

200

IXYS reserves the right to change limits, conditions and dimensions.

20170116eData according to IEC 60747and per semiconductor unless otherwise specified

MCD312-12io1

Ratings

Part Number

yywwAA

Date Code

(DC)

Production

Index (PI)

Lot.No: xxxxxx

Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.#

(26-31),

blank (32), serial no.# (33-36)

Circuit

Package

°C

Nm7

mounting torque

4.5

°C140

virtual junction temperature

-40

Weight

g680

Symbol

Definition

typ.

max.

min.

Conditions

operation temperature

Unit

Nm13

terminal torque

t = 1 second

t = 1 minute

isolation voltage

16.0

Spp/App

creepage distance on surface | striking distance through air

Spb/Apb

terminal to backside

RMS

RMS current

600 A

per terminal

125-40

terminal to terminal

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCD312-12io1 461849Box 3MCD312-12io1Standard

3600

ISOL

stg

°C125

storage temperature

-40

3000

threshold voltage

V0.8

mΩ

0 max

slope resistance *

0.5

Equivalent Circuits for Simulation

T =

Thyristor

140 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20170116eData according to IEC 60747and per semiconductor unless otherwise specified

P1-P3 P4-P6

MCD312-18io1

Mfr. #:

Buy MCD312-18io1

Manufacturer:

Littelfuse

Description:

Discrete Semiconductor Modules 312 Amps 1800V

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

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MCD312-18io1

MCD312-18io1

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