NLAS4599
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol Parameter Test Conditions
Guaranteed Max Limit
Unit
V
CC
V
IS
−55 to 255C <855C <1255C
(V) (V) Min Typ* Max Min Max Min Max
t
ON
Turn−On Time
(Figures 12 and 13)
R
L
= 300 C
L
= 35 pF
(Figures 5 and 6)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5
5
2
2
23
16
11
9
28
21
16
14
5
5
2
2
30
25
20
20
5
5
2
2
30
25
20
20
ns
t
OFF
Turn−Off Time
(Figures 12 and 13)
R
L
= 300 C
L
= 35 pF
(Figures 5 and 6)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
7
5
4
3
12
10
9
8
1
1
1
1
15
15
12
12
1
1
1
1
15
15
12
12
ns
t
BBM
Minimum
Break−Before−Make
Time
V
IS
= 3.0 V (Figure 4)
R
L
= 300 C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
12
11
6
5
1
1
1
1
1
1
1
1
ns
*Typical Characteristics are at 25°C.
Typical @ 25, VCC = 5.0 V
C
IN
C
NO
or C
NC
C
COM
C
(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol Parameter Condition
V
CC
(V)
Typical
Unit
25°C
BW Maximum On−Channel −3dB Bandwidth or
Minimum Frequency Response
(Figure 10)
V
IN
= 0 dBm
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
170
200
200
MHz
V
ONL
Maximum Feedthrough On Loss
V
IN
= 0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
−3
−3
−3
dB
V
ISO
Off−Channel Isolation
(Figure 10)
f = 100 kHz; V
IS
= 1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
−93
−93
−93
dB
Q Charge Injection Select Input to
Common I/O
(Figure 15)
V
IN
=
V
CC
to
GND, F
IS
= 20 kHz
t
r
= t
f
= 3 ns
R
IS
= 0 , C
L
= 1000 pF
Q = C
L
* V
OUT
(Figure 8)
3.0
5.5
1.5
3.0
pC
THD Total Harmonic Distortion
THD + Noise
(Figure 14)
F
IS
= 20 Hz to 100 kHz, R
L
= Rgen = 600 ,
C
L
= 50 pF
V
IS
= 5.0 V
PP
sine wave
5.5 0.1 %
