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NLVAS4599DFT2

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 11
1 Publication Order Number:
NLAS4599/D
NLAS4599
Low Voltage Single Supply
SPDT Analog Switch
The NLAS4599 is an advanced high speed CMOS single pole −
double throw analog switch fabricated with silicon gate CMOS
technology. It achieves high speed propagation delays and low ON
resistances while maintaining low power dissipation. This switch
controls analog and digital voltages that may vary across the full
power−supply range (from V
CC
to GND).
The device has been designed so the ON resistance (R
ON
) is much
lower and more linear over input voltage than R
ON
of typical CMOS
analog switches.
The channel select input is compatible with standard CMOS outputs.
The channel select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
• Channel Select Input Over−Voltage Tolerant to 5.5 V
• Fast Switching and Propagation Speeds
• Break−Before−Make Circuitry
• Low Power Dissipation: I
CC
= 2 A (Max) at T
A
= 25°C
• Diode Protection Provided on Channel Select Input
• Improved Linearity and Lower ON Resistance over Input Voltage
• Latch−up Performance Exceeds 300 mA
• ESD Performance: Human Body Model > 2000 V;
Machine Model > 200 V
• Chip Complexity: 38 FETs
• Pb−Free Packages are Available
U U
COM
CHANNEL SELECT 2 X 0
2 X 1
NO
U
NC
NO
SELECT
6
1
2
3
5
4
COM
NC
GND
V
+
Figure 1. Pin Assignment
Figure 2. Logic Symbol
FUNCTION TABLE
Select ON Channel
L
H
NC
NO
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING
DIAGRAMS
TSOP−6
DT SUFFIX
CASE 318G
SC−88
DF SUFFIX
CASE 419B
A0 MG
G
1
6
A0 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
1
A0 MG
G
1
1
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
NLAS4599
http://onsemi.com
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage −0.5 to +7.0 V
V
IS
Analog Input Voltage (V
NO
or V
COM
) −0.5 ≤ V
IS
≤ V
CC
)0.5 V
V
IN
Digital Select Input Voltage −0.5 ≤ V
I
≤ + 7.0 V
I
IK
DC Current, Into or Out of Any Pin $50 mA
P
D
Power Dissipation in Still Air SC−88
TSOP−6
200
200
mW
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1mm from Case for 10 seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
2000
200
N/A
V
I
LATCH−UP
Latch−Up Performance Above V
CC
and Below GND at 125°C (Note 4) $300 mA
JA
Thermal Resistance SC−88
TSOP−6
333
333
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
Digital Select Input Voltage GND 5.5 V
V
IS
Analog Input Voltage (NC, NO, COM) GND V
CC
V
T
A
Operating Temperature Range −55 +125 °C
t
r
, t
f
Input Rise or Fall Time,
SELECT V
CC
= 3.3 V + 0.3 V
V
CC
= 5.0 V + 0.5 V
0
0
100
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
Junction
Temperature 5C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
T
J
= 130°C
T
J
= 110°C
T
J
= 100°C
T
J
= 90°C
T
J
= 80°C
T
J
= 120°C
NLAS4599
http://onsemi.com
3
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Condition V
CC
−55 to 255C <855C <1255C Unit
V
IH
Minimum High−Level
Input Voltage, Select
Input
2.0
2.5
3.0
4.5
5.5
1.5
1.9
2.1
3.15
3.85
1.5
1.9
2.1
3.15
3.85
1.5
1.9
2.1
3.15
3.85
V
V
IL
Maximum Low−Level
Input Voltage, Select
Input
2.0
2.5
3.0
4.5
5.5
0.5
0.6
0.9
1.35
1.65
0.5
0.6
0.9
1.35
1.65
0.5
0.6
0.9
1.35
1.65
V
I
IN
Maximum Input Leakage
Current, Select Input
V
IN
= 5.5 V or GND 5.5 +0.1 +1.0 +1.0
A
I
OFF
Power Off Leakage
Current
V
IN
= 5.5 V or GND 0 $10 $10 $10
A
I
CC
Maximum Quiescent
Supply Current
Select and V
IS
= V
CC
or GND 5.5 1.0 1.0 2.0
A
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Limit
Symbol Parameter Condition V
CC
−55 to 255C <855C <1255C Unit
R
ON
Maximum “ON”
Resistance
(Figures 17 − 23)
V
IN
= V
IL
or V
IH
V
IS
= GND to V
CC
I
IN
I < 10.0 mA
2.5
3.0
4.5
5.5
85
45
30
25
95
50
35
30
105
55
40
35
R
FLAT
(ON)
ON Resistance Flatness
(Figures 17 − 23)
V
IN
= V
IL
or V
IH
I
IN
I < 10.0 mA
V
IS
= 1V, 2V, 3.5V
4.5 4 4 5
R
ON
(ON)
ON Resistance Match
Between Channels
V
IN
= V
IL
or V
IH
I
IN
I < 10.0 mA
V
NO
or V
NC
= 3.5 V
4.5 2 2 3
I
NC(OFF)
I
NO(OFF)
NO or NC Off Leakage
Current (Figure 9)
V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 1.0 V
COM
4.5 V
5.5 1 10 100 nA
I
COM(ON
)
COM ON Leakage
Current (Figure 9)
V
IN
= V
IL
or V
IH
V
NO
1.0 V or 4.5 V with V
NC
floating or
V
NO
1.0 V or 4.5 V with V
NO
floating
V
COM
= 1.0 V or 4.5 V
5.5 1 10 100 nA
P1-P3P4-P6P7-P9P10-P11

NLVAS4599DFT2

Mfr. #:
Buy NLVAS4599DFT2
Manufacturer:
ON Semiconductor
Description:
IC SWITCH SPDT SC88
Lifecycle:
New from this manufacturer.
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