BDX34C

BDX33B BDX33C

BDX34B BDX34C

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

DESCRIPTION

The BDX33B and BDX33C are silicon

Epitaxial-Base NPN power transistors in

monolithic Darlington configuration mounted in

Jedec TO-220 plastic package. They are intented

for use in power linear and switching applications.

The complementary PNP types are BDX34B and

BDX34C respectively.

®

INTERNAL SCHEMATIC DIAGRAM

October 1999

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Unit

NPN BDX33B BDX33C

PNP BDX34B BDX34C

V

CBO

Collector-Base Voltage (I

E

= 0) 80 100 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) 80 100 V

I

C

Collector Current 10 A

I

CM

Collector Peak Current 15 A

I

B

Base Current 0.25 A

P

tot

Total Dissipation at T

c

≤ 25

o

C

70 W

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

For PNP types voltage and current values are negative.

1

2

3

TO-220

R

1

Typ. = 10 K

Ω

R

2

Typ. = 150

Ω

1/4

THERMAL DATA

R

thj-case

Thermal Resistance Junction-case 1.78

o

C/W

ELECTRICAL CHARACTERISTICS

(T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

Collector Cut-off Current

(I

E

= 0)

for

BDX33B/34B

V

CB

= 80 V

for

BDX33C/34C

V

CB

= 100V

T

case

= 100

o

C

for

BDX33B/34B

V

CB

= 80 V

for

BDX33C/34C

V

CB

= 100 V

0.2

0.2

5

5

mA

mA

mA

mA

I

CEO

Collector Cut-off Current

(I

B

= 0)

for

BDX33B/34B

V

CE

= 40 V

for

BDX33C/34C

V

CE

= 50V

T

case

= 100

o

C

for

BDX33B/34B

V

CE

= 40 V

for

BDX33C/34C

V

CE

= 50 V

0.5

0.5

10

10

mA

mA

mA

mA

I

EBO

Emitter Cut-off Current

(I

C

= 0)

V

EB

= 5 V

5mA

V

CEO(sus)

∗ Collector-Emitter Sustaining

Voltage (I

B

= 0)

I

C

=100 mA for

BDX33B/34B

for

BDX33C/34C

80

100

V

V

V

CER(sus)

∗ Collector-emitter Sustaining

Voltage (R

BE

=100 Ω)

I

C

= 100 mA for

BDX33B/34B

for

BDX33C/34C

80

100

V

V

V

CEV(sus)

∗ Collector-emitter Sustaining

Voltage (V

BE

=-1.5 V)

I

C

= 100 mA for

BDX33B/34B

for

BDX33C/34C

80

100

V

V

V

CE(sat)

∗ Collector-emitter Saturation

Voltage

I

C

= 3 A I

B

= 6 mA 2.5 V

V

BE

∗ Base-emitter Voltage I

C

= 3 A V

CE

= 3 V 2.5 V

h

FE

∗ DC Current Gain I

C

= 3 A V

CE

= 3 V 750 V

V

F

∗ Parallel-Diode Forward

Voltage

I

F

= 8 A 4 V

h

fe

Small Signal Current Gain I

C

= 1 A V

CE

= 5 V f = 1MHz 100

∗

Pulsed: Pulse duration = 300

µ

s, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Area

BDX33B BDX33C BDX34B BDX34C

2/4

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051

D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067

F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106

H2 10.0 10.40 0.393 0.409

L2 16.4 0.645

L4 13.0 14.0 0.511 0.551

L5 2.65 2.95 0.104 0.116

L6 15.25 15.75 0.600 0.620

L7 6.2 6.6 0.244 0.260

L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

P011C

TO-220 MECHANICAL DATA

BDX33B BDX33C BDX34B BDX34C

3/4

BDX34C

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Darlington Transistors Silicon Pwr Trnsistr

Lifecycle:

New from this manufacturer.

Delivery:

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Products related to this Datasheet

BDX34C