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NVD6495NLT4G-VF01

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1 Publication Order Number:
NVD6495NL/D
NVD6495NL
N-Channel Power MOSFET
100 V, 25 A, 50 mW, Logic
Level
Features
• Low R
DS(on)
• 100% Avalanche Tested
• AEC−Q101 Qualified
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
100 V
Gate−to−Source Voltage − Continuous V
GS
$20 V
Continuous Drain
Current
Steady
State
T
C
= 25°C
I
D
25
A
T
C
= 100°C 18
Power Dissipation Steady
State
T
C
= 25°C P
D
83 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
80 A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
25 A
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc, I
L(pk)
=
23 A, L = 0.3 mH, R
G
= 25 W)
E
AS
79 mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain) − Steady State
R
q
JC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
39
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
6495NL = Device Code
Y = Year
WW = Work Week
G = Pb−Free Package
DPAK
CASE 369AA
STYLE 2
YWW
64
95NLG
4 Drain
3
Source
1
Gate
2
Drain
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
100 V
50 mW @ 10 V
25 A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
54 mW @ 4.5 V
1
2
3
4
NVD6495NL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
V
GS
= 0 V, I
D
= 250 mA, T
J
= −40°C
100
92
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
115 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.8 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 10 A
44 54
mW
V
GS
= 10 V, I
D
= 10 A 43 50
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 10 A 24
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
1024
pF
Output Capacitance C
OSS
156
Reverse Transfer Capacitance C
RSS
70
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 80 V, I
D
= 23 A
20
nC
Threshold Gate Charge Q
G(TH)
1.1
Gate−to−Source Charge Q
GS
3.1
Gate−to−Drain Charge Q
GD
14
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 80 V, I
D
= 23 A 35 nC
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DD
= 80 V,
I
D
= 23 A, R
G
= 6.1 W
11
ns
Rise Time t
r
91
Turn−Off Delay Time t
d(off)
40
Fall Time t
f
71
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 23 A
T
J
= 25°C 0.87 1.2
V
T
J
= 125°C 0.74
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 23 A
64
ns
Charge Time T
a
40
Discharge Time T
b
24
Reverse Recovery Charge Q
RR
152 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
†
NVD6495NLT4G DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
NVD6495NL
http://onsemi.com
3
0
5
10
15
20
25
30
35
40
45
012345
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
T
J
= 25°C
V
GS
= 10 V
5 V
4 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
V
DS
w 10 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
Figure 3. On−Region versus Gate Voltage
0.040
0.042
0.044
0.046
0.048
0.050
5 1015202
5
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 25°C
0.5
1.0
1.5
2.0
2.5
3.0
−50 −25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
= 23 A
V
GS
= 4.5 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
100
1000
10000
10 20 30 40 50 60 70 80 90 10
0
T
J
= 125°C
V
GS
= 0 V
T
J
= 150°C
0
5
10
15
20
25
30
35
40
45
123
4
0.040
0.042
0.044
0.046
0.048
0.050
2345678910
I
D
= 23 A
T
J
= 25°C
P1-P3P4-P6

NVD6495NLT4G-VF01

Mfr. #:
Buy NVD6495NLT4G-VF01
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 100V 23A 56MOHM
Lifecycle:
New from this manufacturer.
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