Product Standards
TVS Diode
DY2L3A0C0L1
Absolute Maximum Ratings Ta = 25 C
Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.0 mm)
*2 Test method:IEC61000-4-2
(C = 150 pF, R = 330 W, Contact and Air discharge:10 times)
Test method:IEC61000-4-5 (tp = 8/20ms, Unrepeated)
Electrical Characteristics Ta = 25 C 3 C
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1 The temperature must be controlled 25°C for VBR mesurement.
VBR value measured at other temperature must be adjusted to VBR (25°C).
*2
VBR guaranted 20 ms after current flow.
Embossed type (Thermo-compression sealing) :
Electrostatic discharge
*2
Total power dissipation
*1
Reverse breakdown voltage
*1, *2
Operating ambient temperature
Ipp = 2.6 A, tp = 8/20 ms
Silicon epitaxial planar type
For bidirectional ESD protection and transient voltage suppressor
IEC 61000-4-2 (ESD) ±15kV (air and contact)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Reverse stand-off voltage
Front time:
T1 = 1.25 × T = 8ms±20%
Time to half value:
T2 = 20ms±20%
0.3
0.6
0.115
0.115
0.2150.1
0.4
0.0425
1
2
0.215
