2SD2318
Transistors
High-current gain Power Transistor
(60V, 3A)
2SD2318
!
Features
1) High DC current gain.
2) Low saturation voltage.
(Typ. V
CE
(sat) =0.5V at I
C
/ I
B
=2A / 0.5A)
3) Complements the 2SB1639.
!
!!
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
*
Single pulse Pw=100ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
80
60
6
3
4.5
*
1
150
-55~+150
Unit
V
V
V
A
A(Pulse)
W
15 W(Tc=25˚C)
˚C
˚C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
!!
!
External dimensions
(Units : mm)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.5
0.65
0.9
(
1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
5.1
!
!!
!
Packaging specifications and h
FE
Type 2SD2318
CPT3
UV
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
!
!!
!
Electrical characteristics
(Ta=25
°
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
80
60
6
-
-
-
-
-
-
-
-
-
-
-
50
60
-
-
-
100
100
1.0
-
-
V
V
V
µA
µA
V
MHz
*
pF
I
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
80V
V
EB
=
6V
I
C
/I
B
=
2A/0.05A
V
BE(sat)
- - 1.5 V
*
*
I
C
/I
B
=
2A/0.05A
h
FE
560 - 1800 -
V
CE
/I
C
=
4V/0.5A
V
CE
=
5V, I
E
=-
0.2A, f
=
10MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Base-emitter saturation voltage
DC current transfer ratio
*
Measured using pulse current.
