2004 Jan 13 3
NXP Semiconductors Product data sheet
NPN switching transistors BSR13; BSR14
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR13 − 60 V
BSR14 − 75 V
V
CEO
collector-emitter voltage open base
BSR13 − 30 V
BSR14 − 40 V
V
EBO
emitter-base voltage open collector
BSR13 − 5 V
BSR14 − 6 V
I
C
collector current (DC) − 800 mA
I
CM
peak collector current − 800 mA
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current
BSR13 I
E
= 0; V
CB
= 50 V − 30 nA
I
E
= 0; V
CB
= 50 V; T
j
= 150 °C − 10 µA
collector cut-off current
BSR14 I
E
= 0; V
CB
= 60 V − 10 nA
I
E
= 0; V
CB
= 60 V; T
j
= 150 °C − 10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V
BSR13 − 30 nA
BSR14 − 10 nA
