FSBCW30
FSBCW30, Rev B
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 32 V
V
CBO
Collector-Base Voltage 32 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 500 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
1998 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 300 mA.
Sourced from Process 68. See BC857A for characteristics.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FSBCW30
P
D
Total Device Dissipation
Derate above 25°C
500
4
mW
mW/°C
R
θ
JA
Thermal Resistance, Junction to Ambient 250
°C/W
*Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in
2
of 2oz copper.
FSBCW30
SuperSOT
TM
-3
C
B
E
