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NCS210SQT2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 7
1 Publication Order Number:
NCS210/D
NCS210, NCV210, NCS211
Current-Shunt Monitor,
Voltage Output,
Bi-Directional Zero-Drift
The NCS210, NCV210, and NCS211 are voltage output current
shunt monitors that can measure voltage across shunts at
common−mode voltages from −0.3 V to 26 V, independent of supply
voltage. Two fixed gains are available: 200 V/V, or 500 V/V. The low
offset of the zero−drift architecture enables current sensing with
maximum drops across the shunt as low as 10 mV full−scale.
The devices can operate from a single +2.7 V to +26 V power
supply, drawing a maximum of 100 mA of supply current. All versions
are specified over the extended operating temperature range (–40°C to
+125°C). Available in SC−70 and thin UQFN space−saving packages.
Features
• Wide Common−Mode Input Range −0.3 V to 26 V
• Supply Voltage Range from 2.7 V to 26 V
• Low Offset Voltage ±60 mV Max
• Low Offset Drift (0.1 mV/°C)
• Low Gain Error (Max 1%)
• Rail−to−Rail Input and Output Capability
• Low Current Consumption (typ 65 mA, 100 mA max)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Current Sensing (High−Side/Low−Side)
• Automotive
• Telecom
• Sensors
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
SC70−6
SQ SUFFIX
CASE 419B
MARKING DIAGRAMS
www.onsemi.com
PIN CONNECTIONS
See detailed ordering, marking and shipping information on
page 4 of this data sheet.
ORDERING INFORMATION
XXXMG
G
XXX = Specific Device Code (See page 4)
M = Date Code
G = Pb−Free Package
1
6
(Note: Microdot may be in either location)
V
S
Product
NCS210
Gain R3−R4 R1−R2
200
5 kW 1 MW
NCV210 200
5 kW 1 MW
NCS211 500
2 kW 1 MW
V
OUT
+
ǒ
I
LOAD
R
SHUNT
Ǔ
GAIN ) V
REF
−
+
UQFN10
MU SUFFIX
CASE 488AT
XXMG
G
1
*
NC denotes no internal connection. These pins can be left floating or
c
onnected to any voltage between Vs and GND.
1
2
3
6
5
4
REF OUT
GND IN−
IN+
V
S
12 3
65
4
REF
OUT
GND IN−
IN+
7
10
8
9
IN−
IN+*NC
*NC
NCS210, NCV210, NCS211
www.onsemi.com
2
R4
R2
−
+
R3
R1
NCS21x
REF
OUT
IN−
IN+
GND
Supply
Load
Reference
Voltage
Output
Figure 1. Application Schematic
+2.7 V to +26 V
R
SHUNT
V
S
0.01 mF
To
0.1 mF
Table 1. MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage (Note 1) NCS21x
NCV21x
V
S
+26
+28
V
Analog Inputs
Differential (V
IN+
)−(V
IN−
)
V
IN+,
V
IN−
−26 to +26
V
Common−Mode (Note 2) NCS21x
NCV21x
GND−0.3 to +26
GND−0.3 to +28
REF Input V
REF
GND−0.3 to ( V
s
) +0.3 V
Output (Note 2) V
OUT
GND−0.3 to ( V
s
) +0.3 V
Input Current into Any Pin (Note 2) 5 mA
Maximum Junction Temperature T
J(max)
+150 °C
Storage Temperature Range TSTG −65 to +150 °C
ESD Capability, Human Body Model (Note 3) HBM ±3000 V
ESD Capability, Machine Model (Note 3) MM ±100 V
Charged Device Model (Note 3) CDM ±1000 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA.
3. This device series incorporates ESD protection and is tested by the following methods
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD Charged Device Model tested per AEC−Q100−011.
Latchup Current Maximum Rating: 50 mA per JEDEC standard: JESD78
Table 2. THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Characteristics (Note 4)
Thermal Resistance, Junction−to−Air (Note 5) SC−70
UQFN10
R
q
JA
250
300
°C/W
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
5. Values based on copper area of 645 mm
2
(or 1 in
2
) of 1 oz copper thickness and FR4 PCB substrate.
Table 3. RECOMMENDED OPERATING RANGES
Rating Symbol Min Max Unit
Supply Voltage V
S
2.7 26 V
Ambient Temperature T
A
−40 125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NCS210, NCV210, NCS211
www.onsemi.com
3
Table 4. ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, T
A
= −40°C to 125°C, guaranteed by characterization and/or design.
At T
A
= +25°C, V
SENSE
= V
IN+
− V
IN−.
NCS210, NCV210: V
S
= +5 V, V
IN+
= 12 V, and V
REF
= V
S
/2, unless otherwise noted.
NCS211: V
S
= +12 V, V
IN+
= 12 V, and V
REF
= V
S
/2, unless otherwise noted.
Parameter
Test Conditions Symbol Min Typ Max Unit
GAIN
NCS210, NCV210
NCS211
G 200
500
V/V
Gain Error NCS210, NCS211 V
SENSE
= −5 mV to 5 mV G
e
+0.2 +1 %
NCV210 V
SENSE
= −5 mV to 5 mV G
e
+0.2 +1.5 %
Gain Error vs. Temp. NCS210, NCS211 T
A
= −10°C to 125°C 7 14 ppm/°C
NCV210 T
A
= −40°C to 125°C 7 70 ppm/°C
Nonlinearity Error V
SENSE
= −5 mV to 5 mV ±0.01 %
Maximum Capacitive Load No sustained oscillation 1 nF
VOLTAGE OFFSET
Offset Voltage
(RTI Note 6)
NCS210, NCS211 V
SENSE
= 0 mV V
OS
±0.55 ±60
mV
NCV210 ±0.55 ±90
mV
Offset Drift NCS210, NCS211
dV/dT
0.1 0.6
mV/°C
NCV210
dV/dT
0.1 1.0
mV/°C
INPUT
Input Bias Current V
SENSE
= 0 mV I
IB
60
mA
Common−Mode Input Voltage Range V
CM
−0.3 26 V
Common−Mode
Rejection Ratio
NCS210, NCS211
V
S
= 5 V, V
IN+
= 2 V to +26 V,
V
SENSE
= 0 mV
CMRR 103 115 dB
V
S
= 3.3 V, V
IN+
= 3 V to +26 V,
V
SENSE
= 0 mV
103 115 dB
V
S
= 3.3 V, V
IN+
= 0 V to +26 V,
V
SENSE
= 0 mV (T
A
= −10°C to 85°C)
103 120 dB
Common−Mode
Rejection Ratio
NCV210
V
S
= 5 V, V
IN+
= 2 V to +26 V,
V
SENSE
= 0 mV
CMRR 100 115 dB
V
S
= 3.3 V, V
IN+
= 3 V to +26 V,
V
SENSE
= 0 mV
100 115 dB
OUTPUT
Output Voltage Low
Referenced from GND
R
L
= 10 kΩ to Ground
V
OL
5 50 mV
Output Voltage High Referenced from V
S
R
L
= 10 kΩ to Ground
V
OH
0.05 0.2 V
DYNAMIC PERFORMANCE
Bandwidth (f
−3dB
) C
LOAD
= 10 pF, NCS210, NCV210
C
LOAD
= 10 pF, NCS211
BW 40
25
kHz
Slew Rate SR 0.4
V/ms
NOISE
Spectral Density, 1 kHz (RTI Note 6) e
n
35 nV/ǠHz
POWER SUPPLY
Operating Voltage Range V
SENSE
= 0 mV V
s
2.7 26 V
Quiescent Current V
SENSE
= 0 mV I
DD
65 100
mA
Quiescent Current over Temperature V
SENSE
= 0 mV 115
mA
Power Supply Rejection Ratio V
S
= +2.7 V to +26 V, V
IN+
=18 V,
V
SENSE
= 0 mV
PSRR ±0.1 ±10
mV/V
6. RTI = referenced−to−input.
P1-P3P4-P6

NCS210SQT2G

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Manufacturer:
ON Semiconductor
Description:
Current Sense Amplifiers Current Sense Amplif
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