Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS75024A 10/11
Product Brief
www.microchip.com
Features
• High Gain:
– Typically 34 dB gain across 2.4–2.5 GHz
• High linear output power (at 5V)
– >30 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to 28.5
dBm
– Added EVM ~3% up to 25 dBm for 54 Mbps 802.11g
signal
– Meets 802.11b ACPR requirement up to 28.5 dBm
• High-speed power-up/down
– Turn on/off time (10%-90%) <100 ns
• 10:1 VSWR survivability (unconditionally stable up
to 28.5 dBm)
• On-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN (3mm x 3mm x 0.9mm)
• All devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• WiMax (IEEE 802.16e)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
Block Diagram
Product Ordering
Valid combinations for SST12CP11
SST12CP11-QVCE
SST12CP11 Evaluation Kits
SST12CP11-QVCE-K
Note: Valid combinations are those products in mass produc-
tion or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations
and to determine availability of new combinations.
RF
IN
V
CCB
V
REF2
DET
V
CC1
V
CC2
V
CC3
RF
OUT
XXXXX B1.0
V
REF1
Input
Match
Bias
Control
Power
Detection
2.4 GHz High-Power and High-Gain Power Amplifier
SST12CP11
The SST12CP11 is a high-power and high-gain power amplifier (PA) based on the
highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for
high-power applications with good power-added efficiency while operating over the
2.4-2.5 GHz frequency band. It typically provides 34 dB gain and has excellent lin-
earity, typically ~3% added EVM at 25 dBm output power, which is essential for 54
Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 28.5 dBm. The
power amplifier IC also features easy board-level usage along with high-speed
power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package.
