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Document Number: 71611
S09-0130-Rev. D, 02-Feb-09
Vishay Siliconix
Si2314EDS
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
20
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.45 0.95
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V
± 1.5
µA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
75
On-State Drain Current
a
I
D(on)
V
DS
≥ 10 V, V
GS
= 4.5 V
15 A
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 5.0 A
0.027 0.033
Ω
V
GS
= 2.5 V, I
D
= 4.5 A
0.033 0.040
V
GS
= 1.8 V, I
D
= 4.0 A
0.042 0.051
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 5.0 A
40 S
Diode Forward Voltage
V
SD
I
S
= 1.0 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5.0 A
11.0 14.0
nCGate-Source Charge
Q
gs
1.5
Gate-Drain Charge
Q
gd
2.1
Switching
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 1.0 A, V
GEN
= 4.5 V, R
g
= 6 Ω
0.53 0.8
µs
Rise Time
t
r
1.4 2.2
Turn-Off Delay Time
t
d(off)
13.5 20
Fall Time
t
f
5.9 9
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.0 A, dI/dt = 100 A/µs
13 25 ns
Gate-Current vs. Gate-Source Voltage
0
200
400
600
800
1000
1200
024681012
V
GS
- Gate-to-Source Voltage (V)
- Gate Current (mA)I
GSS
Gate Current vs. Gate-Source Voltage
0.0001
100
10 000
0.1
1
10
1000
V
GS
- Gate-to-Source Voltage (V)
- Gate Current (µA)I
GSS
0.01
T
J
= 150 °C
T
J
= 25 °C
0.001
0.1 1 10 100
