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SQ4937EY-T1_GE3

P1-P3P4-P6P7-P9
SQ4937EY
www.vishay.com
Vishay Siliconix
S11-2113-Rev. B, 07-Nov-11
1
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
•100 % R
g
and UIS Tested
• AEC-Q101 Qualified
c
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) - 30
R
DS(on)
() at V
GS
= - 10 V 0.075
R
DS(on)
() at V
GS
= - 4.5 V 0.145
I
D
(A) per leg - 5
Configuration Dual
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and Halogen-free SQ4937EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
- 5
A
T
C
= 125 °C - 3
Continuous Source Current (Diode Conduction) I
S
- 3
Pulsed Drain Current
a
I
DM
- 20
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 10
Single Pulse Avalanche Energy E
AS
5mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
3.3
W
T
C
= 125 °C 1.1
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
110
°C/W
Junction-to-Foot (Drain) R
thJF
45
SQ4937EY
www.vishay.com
Vishay Siliconix
S11-2113-Rev. B, 07-Nov-11
2
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 μA - 30 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= - 30 V - - - 1.0
μA V
GS
= 0 V V
DS
= - 30 V, T
J
= 125 °C - - - 50
V
GS
= 0 V V
DS
= - 30 V, T
J
= 175 °C - - - 150
On-State Drain Current
a
I
D(on)
V
GS
= - 10 V V
DS
- 5 V - 15 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V I
D
= - 3.9 A - 0.056 0.075
V
GS
= - 10 V I
D
= - 3.9 A, T
J
= 125 °C - - 0.109
V
GS
= - 10 V I
D
= - 3.9 A, T
J
= 175 °C - - 0.127
V
GS
= - 4.5 V I
D
= - 2 A - 0.119 0.145
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 3.9 A - 6 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= - 25 V, f = 1 MHz
- 384 480
pF Output Capacitance C
oss
- 84 105
Reverse Transfer Capacitance C
rss
-5670
Total Gate Charge
c
Q
g
V
GS
= - 10 V V
DS
= - 15 V, I
D
= - 4.9 A
-9.515
nC Gate-Source Charge
c
Q
gs
-1.7-
Gate-Drain Charge
c
Q
gd
-2.3-
Gate Resistance R
g
f = 1 MHz 3.5 - 10.5
Turn-On Delay Time
c
t
d(on)
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
-69
ns
Rise Time
c
t
r
-812
Turn-Off Delay Time
c
t
d(off)
-1523
Fall Time
c
t
f
-812
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--- 20A
Forward Voltage V
SD
I
F
= - 3 A, V
GS
= 0 V - - 0.85 - 1.2 V
SQ4937EY
www.vishay.com
Vishay Siliconix
S11-2113-Rev. B, 07-Nov-11
3
Document Number: 67043
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
4
8
12
16
20
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 6 V
V
GS
= 3 V
V
GS
= 4 V
V
GS
= 5 V
0
1
2
3
4
5
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= - 55 °C
T
C
= 125 °C
0.0
0.1
0.2
0.3
0.4
0.5
0 4 8 12 16 20
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
4
8
12
16
20
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
2
4
6
8
10
0 1 2 3 4 5
g
fs
-Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
200
400
600
800
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P9

SQ4937EY-T1_GE3

Mfr. #:
Buy SQ4937EY-T1_GE3
Manufacturer:
Vishay
Description:
MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Lifecycle:
New from this manufacturer.
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