2N3904

2N3904

SMALL SIGNAL NPN TRANSISTOR

PRELIMINARY DATA

■ SILICON EPITAXIAL PLANAR NPN

TRANSISTOR

■ TO-92 PACKAGE SUITABLE FOR

THROUGH-HOLE PCB ASSEMBLY

■ THE PNP COMPLEMENTARY TYPE IS

2N3906

APPLICATIONS

■ WELL SUITABLE FOR TV AND HOME

APPLIANCE EQUIPMENT

■ SMALL LOAD SWITCH TRANSISTOR WITH

HIGH GAIN AND LOW SATURATION

VOLTAGE

®

INTERNAL SCHEMATIC DIAGRAM

February 2003

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage (I

E

= 0) 60 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) 40 V

V

EBO

Emitter-Base Voltage (I

C

= 0) 6 V

I

C

Collector Current 200 mA

P

tot

Total Dissipation at T

C

= 25

o

C 625 mW

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

Ordering Code Marking Package / Shipment

2N3904 2N3904 TO-92 / Bulk

2N3904-AP 2N3904 TO-92 / Ammopack

TO-92

Bulk

TO-92

Ammopack

1/5

THERMAL DATA

R

thj-amb

•

R

thj-case

•

Thermal Resistance Junction-Ambient Max

Thermal Resistance Junction-Case Max

200

83.3

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CEX

Collector Cut-off

Current (V

BE

= -3 V)

V

CE

= 30 V 50 nA

I

BEX

Base Cut-off Current

(V

BE

= -3 V)

V

CE

= 30 V 50 nA

V

(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(I

B

= 0)

I

C

= 1 mA 40 V

V

(BR)CBO

Collector-Base

Breakdown Voltage

(I

E

= 0)

I

C

= 10 µA

60 V

V

(BR)EBO

Emitter-Base

Breakdown Voltage

(I

C

= 0)

I

E

= 10 µA

6V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= 10 mA I

B

= 1 mA

I

C

= 50 mA I

B

= 5 mA

0.2

0.2

V

V

V

BE(sat)

∗ Base-Emitter

Saturation Voltage

I

C

= 10 mA I

B

= 1 mA

I

C

= 50 mA I

B

= 5 mA 0.65

0.85

0.95

V

V

h

FE

∗ DC Current Gain I

C

= 0.1 mA V

CE

= 1 V

I

C

= 1 mA V

CE

= 1 V

I

C

= 10 mA V

CE

= 1 V

I

C

= 50 mA V

CE

= 1 V

I

C

= 100 mA V

CE

= 1 V

60

80

100

60

30

300

f

T

Transition Frequency I

C

= 10 mA V

CE

= 20 V f = 100 MHz 250 270 MHz

C

CBO

Collector-Base

Capacitance

I

E

= 0 V

CB

= 10 V f = 1 MHz 4 pF

C

EBO

Emitter-Base

Capacitance

I

C

= 0 V

EB

= 0.5 V f = 1 MHz 18 pF

NF Noise Figure V

CE

= 5 V I

C

= 0.1 mA f = 10 Hz

to 15.7 KHz R

G

= 1 KΩ

5dB

t

d

t

r

Delay Time

Rise Time

I

C

= 10 mA I

B

= 1 mA

V

CC

= 30 V

35

35

ns

ns

t

s

t

f

Storage Time

Fall Time

I

C

= 10 mA I

B1

= -I

B2

= 1 mA

V

CC

= 30 V

200

50

ns

ns

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

2N3904

2/5

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.32 4.95 0.170 0.195

b 0.36 0.51 0.014 0.020

D 4.45 4.95 0.175 0.194

E 3.30 3.94 0.130 0.155

e 2.41 2.67 0.095 0.105

e1 1.14 1.40 0.045 0.055

L 12.70 15.49 0.500 0.609

R 2.16 2.41 0.085 0.094

S1 1.14 1.52 0.045 0.059

W 0.41 0.56 0.016 0.022

V 4 degree 6 degree 4 degree 6 degree

TO-92 MECHANICAL DATA

2N3904

3/5

2N3904

Mfr. #:

Manufacturer:

Central Semiconductor

Description:

Bipolar Transistors - BJT NPN Gen Pur SS

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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2N3904