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TVB190NSB-L

P1-P3P4-P5
Document: SCD 27219
SiBar
Thyristor Surge Protectors Status: Released
© 2007 Tyco Electronics Corporation. All rights Reserved. 1 Rev: B Date: DECEMBER 12, 2007
SiBar Thyristor Surge Protectors
TVBxxxNSB-L Series
Raychem Circuit Protection's SiBar thyristor surge
protection devices are designed to help protect sensitive
telecommunication equipment from the hazards caused
by lightning, power contact, and power induction. These
devices have a high electrical surge capability to help
protect against transient faults and a high off-state
impedance, rendering them virtually transparent during
normal system operation.
SiBar thyristor surge protectors are designed to assist
telecommunication and computer telephony equipment
in meeting the applicable requirements and industry
specifications.
Benefits:
• Helps provide protection for sensitive telecom
electronic equipment
• Low leakage current
• Low power dissipation
• Fast, reliable operation
• No wear-out mechanisms
• Helps designers meet worldwide telecom standards
• Helps reduce warranty and service costs
• Easy installation
• Helps improve power efficiency of equipment
Applications:
• Modems • Set top boxes
• Fax machines • POS systems
• Phones, answering machines • Analog and digital linecards (xDSL, T1/E1...)
• PBX systems • Other customer premise and central office network equipment requiring protection
Features:
• RoHS compliant
• Bidirectional crowbar transient voltage protection
• Voltage range: 58V- 320V with improved
Vdrm/Vbo range
• High off-state impedance
• Low on-state voltage
• High surge capability
• Short-circuit failure mode
• Surface-mount technology
• DO-214AA SMB package
• 10 x 1000 μs 80A surge rating
• Helps equipment comply with TIA-968,
Telcordia GR-1089
,
IEC61000-4-5
,
ITU K.20/21/45
Document: SCD 27219
SiBar
Thyristor Surge Protectors Status: Released
© 2007 Tyco Electronics Corporation. All rights Reserved. 2 Rev: B Date: DECEMBER 12, 2007
SiBar Thyristor Surge Protectors
TVBxxxNSB-L Series
Table SB2 – Surge Current Rating
TIA-968 Telcordia GR-1089* IEC61000-4-5 ITU K.20/21/45*
Type A Type B
Part Number
I
pp
(A)
5 x 320 µs
I
pp
(A)
10 x 560 µs
pp
(A)
10 x 160 µs
I
pp
(A)
10 x 1000 µs
I
pp
(A)
2 x 10 µs
I
pp
(A)
8 x 20 µs
I
PP
(A)
5 x 310 μs
(VOC: 10 x 700μs)
I
TSM
Min.
(A)
di/dt
(A/µs)
dV/dt
(V/µs)
TVBxxxNSB-L 100 100 150 80 250 250 100 30 500 2000
Notes: *Lightning current wave forms for applicable industry specification.
I
TSM
, peak on-state surge current is measured at 60 Hz, one cycle.
di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax = 600V; C = 30µF).
dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, V
D
= rated V
BO
, Tj = 25°C
Table SB1 - Electrical Characteristics
Part Number V
DM
Max. (V) V
BO
Max. (V) I
H
Min. (mA) V
T
Max. (V)
C1 (Typ)
50V
DC
Bias
C2 (Typ)
2V
DC
Bias
Off-State
Current
VD2=VDM
(μA)
TVB058NSB-L 58 77 150
4
67 129 5
TVB065NSB-L 65 88 150
4
64 123 5
TVB075NSB-L 75 98 150
4
63 122 5
TVB090NSB-L 90 130 150
4
49 95 5
TVB120NSB-L 120 160 150
4
38 75 5
TVB140NSB-L 140 180 150
4
36 70 5
TVB170NSB-L 170 220 150
4
29 59 5
TVB180NSB-L 180 240 150
4
29 59 5
TVB190NSB-L 190 260 150
4
28 56 5
TVB220NSB-L 220 300 150
4
26 52 5
TVB275NSB-L 275 350 150
4
23 47 5
TVB320NSB-L 320 400 150
4
22 44 5
Notes: All electrical characteristics are measured at 25°C.
V
DM
measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA.
V
BO
measured at 100V/µs.
C1 measured at 1 MHz with a 50 V
DC
bias.
C2 measured at 1MHz with a 2V
DC
bias.
Document: SCD 27219
SiBar
Thyristor Surge Protectors Status: Released
© 2007 Tyco Electronics Corporation. All rights Reserved. 3 Rev: B Date: DECEMBER 12, 2007
SiBar Thyristor Surge Protectors
TVBxxxNSB-L Series
Table SB4 – Physical Characteristics and Environmental Specifications
Lead material Matte tin finish (-L devices)
Encapsulating material Epoxy, meets UL94V-0 requirements
Solderability per MIL-STD-750, Method 2026
Solder heat withstand per MIL-STD-750, Method 2031
Solvent resistance per MIL-STD-750, Method 1022
Mechanical shock per MIL-STD-750, Method 2016
Vibration per MIL-STD-750, Method 2056
Storage temperature (°C) -55 to 150
Operating temperature (°C) -40 to 125
Junction temperature (°C) 175
Maximum Lead Temperature for Soldering Purpose; for 10s (°C) 260
Table SB3 – Dimensions in Millimeters
A B C D*
Dimension Min. Max. Min. Max. Min. Max. Min. Max.
4.06 4.57 3.30 3.94 1.90 2.41 1.95 2.20
TVBxxxNSB-L
(0.160)
(0.180) (0.130) (0.155) (0.075) (0.095) (0.077) (0.087)
H J K P S
Dimension Min. Max. Min. Max. Min. Max. Ref. Min. Max.
0.051 0.200 0.150 0.31 0.76 1.27 0.51 5.21 5.59
TVBxxxNSB-L
(0.002)
(0.008) (0.006) (0.012) (0.030) (0.050) (0.020) (0.205) (0.220)
Notes: *D dimension is measured within dimension P.
TVB series devices use industry standard SMB package type.
All devices are bidirectional and may be oriented in either direction for installation
Table SB5 – Reliability Tests
Test Conditions Duration
High temperature, reverse bias +100°C, 50VDC bias 1000 hours
High humidity, high temperature, reserse bias 85% RH, +85°C, 50VDC bias 1000 hours
High temperature storage life +150°C 1000 hours
Temperature cycling -65°C to +150°C, 15 minute dwell 1000 cycles
Autoclave 100% RH, +121°C, 15 PSI 96 hours
P1-P3P4-P5

TVB190NSB-L

Mfr. #:
Buy TVB190NSB-L
Manufacturer:
Littelfuse
Description:
Thyristor Surge Protection Devices (TSPD) 190V 150mA SiBar Thyristor TSPD
Lifecycle:
New from this manufacturer.
Delivery:
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