VS-MBRB20..CT-M3, VS-MBR20..CT-1-M3
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Vishay Semiconductors
Revision: 03-Nov-17
2
Document Number: 96405
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 135 °C, rated V
R
10
A
per device 20
Peak repetitive forward current per leg I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 135 °C 20
Non-repetitive peak surge current I
FSM
5 μs sine or
3 μs rect. pulse
Following any rated load condition
and with rated V
RRM
applied
1060
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 4 mH 8 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum
V
A
= 1.5 x V
R
typical
2A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
20 A T
J
= 25 °C 0.84
V10 A
T
J
= 125 °C
0.57
20 A 0.72
Maximum instantaneous
reverse current
I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.1
mA
T
J
= 125 °C 15
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.354 V
Forward slope resistance r
t
17.6 m
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 600 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-65 to 150
°C
Maximum storage temperature range T
Stg
-65 to 175
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 2.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style D
2
PAK (TO-263AB)
MBRB2035CT
MBRB2045CT
Case style TO-262AA
MBR2035CT-1
MBR2045CT-1