VS-ST180C08C0

VS-ST180C Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Nov-13
4
Document Number: 94396
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.015 0.015 0.011 0.011
T
J
= T
J
maximum K/W
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
110
100
50
60
70
80
90
40
130
0
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
50
120
100 150 200 250
ST180C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
Ø
Conduction angle
60°
30°
90°
120°
180°
0
200
400
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
300100
110
100
40
50
60
70
80
90
20
130
120
30
ST180C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
30°
60°
90°
120°
180°
Ø
Conduction period
DC
0
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
50
100 150 200 250 300 350 400 450
Ø
Conduction angle
60°
30°
90°
120°
180°
ST180C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.17 K/W
110
100
40
50
60
70
80
90
20
130
120
30
0
200
400 500 600 700
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
300100
110
100
40
50
60
70
80
90
20
130
120
30
ST180C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
30°
60°
90°
120°
180°
Ø
Conduction period
DC
VS-ST180C Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Nov-13
5
Document Number: 94396
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
700
600
100
200
300
400
500
0
900
1000
0
Maximum Average
On-State Power Loss (W)
Average On-State Current (A)
50
800
100 150 200 250 300 350 400 450
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
ST180C..C Series
T
J
= 125 °C
700
600
100
200
300
400
500
0
900
1000
1100
1200
1300
0
Maximum Average
On-State Power Loss (W)
Average On-State Current (A)
800
100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30°
RMS limit
ST180C..C Series
T
J
= 125 °C
Ø
Conduction period
2000
1 10 100
2500
3500
4000
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
4500
3000
At any rated load condition and with
rated V
RRM
applied following surge
ST180C..C Series
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
2000
2500
3500
4000
4500
5000
3000
No Voltage Reapplied
Rated V
RRM
Reapplied
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
ST180C..C Series
100
123456
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
ST180C..C Series
VS-ST180C Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Nov-13
6
Document Number: 94396
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Fig. 11 - Gate Characteristics
0.001
0.01
0.1
1
0.001
Square Wave Pulse Duration (s)
Z
thJ-hs
- Transient
Thermal Impedance (K/W)
0.01 0.1 1 10
Steady state value
R
thJ-hs
= 0.17 K/W
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
ST180C..C Series
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
T
J
= 25 °C
T
J
= 40 °C
T
J
= 125 °C
(b)
(1) (2)
(3) (4)
(1) P
GM
= 10 W, t
p
= 4 ms
(2) P
GM
= 20 W, t
p
= 2 ms
(3) P
GM
= 40 W, t
p
= 1 ms
(4) P
GM
= 60 W, t
p
= 0.66 ms
Frequency limited by P
G(AV)
V
GD
I
GD
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
r
1 µs
b) Recommended load line for
30 % rated dI/dt: 10 V, 10 Ω
t
r
1 µs
Device: ST180C..C Series
(a)

VS-ST180C08C0

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 800 Volt 350 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union